Performance and Reliability Investigation of Mg2Si based Tunnel FET under Temperature Variations for High-Sensitivity Applications

Abstract

Fabrication complexity, low ON-current, and reliability challenges are significant concerns for Tunnel FETs in the semiconductor industry. This study addresses these issues by conducting systematic numerical simulations to introduce a novel N${}^{+}$-based Magnesium Silicide tunneling interface (Mg₂Si-N${}^{+}$-TFET). Utilizing Mg₂Si in the source region enhances key figures of merit (FOMs), such as ON-current, V${}_{TH}$, SS, and the switching ratio, due to its low bandgap, which reduces the tunneling barrier. To optimize the device for low-power and high-speed applications, it is essential to assess its reliability under various constraints. Consequently, this study evaluates the Mg₂Si-N${}^{+}$-TFET thermal performance over a temperature range of 250 K to 450 K and exhibits less sensitivity, making it a promising candidate for low-power switching and biosensing applications, even at elevated temperatures.