High Magnetoresistance Sensitivity and Anisotropic Magnetotransport Properties in the Chiral Helimagnet Cr1/3NbS2

Abstract

Chiral magnets have recently gained recognition as ideal hosts for topological spin textures, showing significant promise for applications in next-generation spintronic devices. However, chiral magnets are still scarce, and their transport properties have been rarely explored. Here, a chiral magnet, Cr_1/3NbS₂, has been synthesized, and its magnetic and transport properties have been systematically investigated. A high magnetoresistance sensitivity of 52.5%/T is achieved, and a magnetic phase diagram of chiral helimagnetic (CHM), chiral soliton lattice (CSL), and forced ferromagnetic (FFM) states has been mapped out. Notably, the anisotropic magnetoresistance (AMR) sign changes from positive to negative with increasing magnetic field due to the evolution of chiral magnetic textures when a large out-of-plane magnetic field component is present. Furthermore, a planar Hall effect comparable to that found in topological semimetals has been observed. Our findings provide a theoretical foundation for the development of future magnetic devices.