Jiale Zhang, Bingjie Ye, Leyang Qian, Xiangyang Zhang*, Xifeng Yang, Yushen Liu, Irina N. Parkhomenko, Fadei F. Komarov, Yu Liu and Guofeng Yang*,
{"title":"Self-Powered Photodetectors Based on Ta2NiSe5/p-GaN Heterostructures for UV Imaging Applications","authors":"Jiale Zhang, Bingjie Ye, Leyang Qian, Xiangyang Zhang*, Xifeng Yang, Yushen Liu, Irina N. Parkhomenko, Fadei F. Komarov, Yu Liu and Guofeng Yang*, ","doi":"10.1021/acsaelm.4c0221010.1021/acsaelm.4c02210","DOIUrl":null,"url":null,"abstract":"<p >Self-powered ultraviolet (UV) photodetectors, which have wide application prospects in optoelectronic fields, have gained great interest in recent years due to their high sensitivity and low power consumption. In this work, a UV photodetector based on a Ta<sub>2</sub>NiSe<sub>5</sub>/p-GaN mixed-dimensional van der Waals heterostructure is fabricated. Owing to its type-I band gap alignment, the fabricated Ta<sub>2</sub>NiSe<sub>5</sub>/p-GaN heterostructure has demonstrated low dark current and rapid response time under 355 nm illumination. Taking advantage of an excellent built-in electrical potential, the device shows impressive photovoltaic properties and can work without an external power supply. Furthermore, the photodetector showed its capabilities in UV imaging. The results are expected to create opportunities for developing high-performance self-powered UV photodetectors.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 3","pages":"1267–1273 1267–1273"},"PeriodicalIF":4.3000,"publicationDate":"2025-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.4c02210","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Self-powered ultraviolet (UV) photodetectors, which have wide application prospects in optoelectronic fields, have gained great interest in recent years due to their high sensitivity and low power consumption. In this work, a UV photodetector based on a Ta2NiSe5/p-GaN mixed-dimensional van der Waals heterostructure is fabricated. Owing to its type-I band gap alignment, the fabricated Ta2NiSe5/p-GaN heterostructure has demonstrated low dark current and rapid response time under 355 nm illumination. Taking advantage of an excellent built-in electrical potential, the device shows impressive photovoltaic properties and can work without an external power supply. Furthermore, the photodetector showed its capabilities in UV imaging. The results are expected to create opportunities for developing high-performance self-powered UV photodetectors.
期刊介绍：
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
Indexed/Abstracted：
Web of Science SCIE
Scopus
CAS
INSPEC
Portico
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
