Luminescence and structural insights of β-Ca2SiO4:Pr3+ Phosphor: Applications towards TL dosimetry and solid state lighting

IF 4.7 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Chemistry and Physics Pub Date : 2025-02-05 DOI:10.1016/j.matchemphys.2025.130508
T.N. Megharaj , B.R. Radha Krushna , I.S. Pruthviraj , S.C. Sharma , K. Manjunatha , Sheng Yun Wu , R. Arunakumar , F. Femila Komahal , G. Ramakrishna , H. Nagabhushana
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Abstract

Trivalent praseodymium (Pr³⁺) doped β-Ca₂SiO₄ (β-CSO:Pr³⁺) phosphors are successfully synthesized via the conventional solid-state reaction method. This sustainable approach utilized SiO₂ extracted from sugarcane bagasse and CaO derived from eggshells (ES). The thermoluminescence (TL) properties of un-doped and β-CSO:Pr³⁺ phosphors are evaluated under γ-irradiation doses ranging from 0.01 Gy to 5 kGy. The TL glow curves of β-CSO:3Pr³⁺ phosphors exhibited prominent peaks at 400 K and 550 K. Activation energy values, determined using CGCD and Chen's peak methods, ranged from 0.5 to 2.5 eV. The incorporation of Pr³⁺ ions introduced deeper traps and significantly enhanced the material's thermal stability. TL reusability measurements showed a standard deviation of less than 5 %, demonstrating consistent and reliable performance over multiple cycles. Deconvolution of the TL glow curves identified six distinct peaks in the un-doped sample, while the Pr³⁺ doped sample displayed a more intricate trap structure with four peaks, indicating the introduction of new or modified trapping sites due to Pr³⁺ doping. The Figure of Merit (FOM) values derived from the deconvolution analysis are all below 1.58 %, signifying an excellent fit between the observed and modelled TL signals. These findings establish β-CSO:3Pr³⁺ phosphors as robust candidates for radiation dosimetry, offering enhanced sensitivity, stability, and adaptability across various dosimetric applications. The excitation spectrum included a host-related excitation band (200–300 nm) and f-f transition bands of Pr³⁺ (440–500 nm), both of which align with commercially available blue-emitting LED chips. Upon excitation with UV (∼247 nm) and blue light (∼457 nm), the phosphors emitted red light primarily from the ³P₀ state of Pr³⁺ ions, with the dominant transition being ³P₀→³F₂ (∼653 nm). The optimal concentration of Pr³⁺ is determined to be 3 mol%, beyond which concentration quenching occurred due to d-d interactions. Furthermore, the β-CSO:3Pr³⁺ phosphors exhibited a color purity of 88.1 %, an internal quantum efficiency (IQE) of 92.51 %, a high color rendering index (CRI) of 91, and a correlated color temperature (CCT) of 5162 K. These results highlight the promising potential of the synthesized nanorods for use in TL dosimetry and solid-state lighting applications.

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β-Ca2SiO4:Pr3+荧光粉的发光和结构:在TL剂量学和固态照明中的应用
采用常规固相反应方法成功合成了三价镨(Pr³)+掺杂β-Ca₂SiO₄(β-CSO:Pr³)荧光粉。这种可持续的方法利用了从甘蔗渣中提取的二氧化硅和从蛋壳中提取的氧化钙。在0.01 Gy ~ 5 kGy的γ辐照剂量下,研究了未掺杂和β-CSO:Pr³+荧光粉的热释光(TL)性能。β-CSO:3Pr³+荧光粉的TL发光曲线在400 K和550 K处呈现出明显的峰。使用CGCD和Chen's峰法测定的活化能值在0.5到2.5 eV之间。Pr³+的掺入引入了更深的陷阱,并显著提高了材料的热稳定性。TL可重用性测量显示,标准偏差小于5%,在多个循环中表现出一致和可靠的性能。对TL发光曲线进行反褶积,在未掺杂的样品中发现了6个不同的峰,而Pr³⁺掺杂的样品显示出更复杂的陷阱结构,有4个峰,这表明Pr³⁺掺杂引入了新的或修饰的陷阱位点。反褶积分析得出的优点图(FOM)值均低于1.58%,表明观测到的和建模的TL信号之间具有良好的拟合。这些发现证实了β-CSO:3Pr³+荧光粉是辐射剂量学的可靠候选材料,在各种剂量学应用中具有更高的灵敏度、稳定性和适应性。激发光谱包括一个与宿主相关的激发带(200-300 nm)和Pr³⁺的f-f跃迁带(440-500 nm),两者都与市售的蓝色发光LED芯片一致。在UV (~ 247 nm)和蓝光(~ 457 nm)激发下,荧光粉主要从Pr³+的³P 0态发射红光,主导跃迁为³P 0→³F 2 (~ 653nm)。Pr³⁺的最佳浓度为3 mol%,超过该浓度后由于d-d相互作用会发生浓度猝灭。此外,β-CSO:3Pr³+荧光粉的色纯度为88.1%,内量子效率(IQE)为92.51%,显色指数(CRI)为91,相关色温(CCT)为5162 K。这些结果突出了合成纳米棒在TL剂量测定和固态照明应用方面的巨大潜力。
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来源期刊
Materials Chemistry and Physics
Materials Chemistry and Physics 工程技术-材料科学:综合
CiteScore
8.70
自引率
4.30%
发文量
1515
审稿时长
69 days
期刊介绍: Materials Chemistry and Physics is devoted to short communications, full-length research papers and feature articles on interrelationships among structure, properties, processing and performance of materials. The Editors welcome manuscripts on thin films, surface and interface science, materials degradation and reliability, metallurgy, semiconductors and optoelectronic materials, fine ceramics, magnetics, superconductors, specialty polymers, nano-materials and composite materials.
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