Damage and degradation region of GaN HEMTs induced by different radiation effects

Abstract

With the increasing demand for higher power density and operating frequency in modern power systems, traditional semiconductor power devices are approaching their material limits. Consequently, there is a growing need for a new generation of semiconductor devices. Gallium nitride (GaN) is widely regarded as the primary candidate material for the next generation of power devices, with AlGaN/GaN HEMTs developed using it as the core material attracting increasing attention. This work aims to summarize the impact of different radiation effects on GaN HEMTs in various scenarios, including radiation damage mechanisms, vulnerable areas, and electrical degradation. Furthermore, this work highlights the potential development trajectory for enhancement mode devices through previously proposed radiation hardening schemes.