Prateek Kaul, Omar Concepción, Daan H. Wielens, Patrick Zellekens, Chuan Li, Zoran Ikonic, Koji Ishibashi, Qing-Tai Zhao, Alexander Brinkman, Detlev Grützmacher, Dan Buca
{"title":"Phase-Coherent Transport in GeSn Alloys on Si (Adv. Electron. Mater. 2/2025)","authors":"Prateek Kaul, Omar Concepción, Daan H. Wielens, Patrick Zellekens, Chuan Li, Zoran Ikonic, Koji Ishibashi, Qing-Tai Zhao, Alexander Brinkman, Detlev Grützmacher, Dan Buca","doi":"10.1002/aelm.202570004","DOIUrl":null,"url":null,"abstract":"<p><b>Phase-Coherent Transport</b></p><p>In article number 2300565, Prateek Kaul, Dan Buca, and co-workers perform magneto-transport measurements on Hall bar devices on the novel alloy system GeSn grown on a Si wafer. The measurements reveal robust phase-coherent transport in high Sn concentrations with weak-localization effects and Shubnikov-de Haas oscillations (pictured). These are further used to extract coherence length, mobility and effective mass of Gamma-valley electrons in direct bandgap GeSn, setting forward a baseline for further experiments on the novel material system for its electronics, spintronics, and quantum computing applications.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 2","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202570004","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/aelm.202570004","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract
Phase-Coherent Transport
In article number 2300565, Prateek Kaul, Dan Buca, and co-workers perform magneto-transport measurements on Hall bar devices on the novel alloy system GeSn grown on a Si wafer. The measurements reveal robust phase-coherent transport in high Sn concentrations with weak-localization effects and Shubnikov-de Haas oscillations (pictured). These are further used to extract coherence length, mobility and effective mass of Gamma-valley electrons in direct bandgap GeSn, setting forward a baseline for further experiments on the novel material system for its electronics, spintronics, and quantum computing applications.
期刊介绍：
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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