Switching Spin Filling Sequence in a Bilayer Graphene Quantum Dot through Trigonal Warping.

Abstract

We demonstrate a switchable electron shell structure in a bilayer graphene quantum dot by manipulating the trigonal warping effect upon electrical gating. Under a small perpendicular electric field, the lowest s shell is sequentially filled with two spin-up and two spin-down electrons of opposite valleys. When increasing the electric field, an additional threefold minivalley degeneracy is generated so that the s shell can be filled with 12 electrons with the first (last) six electrons having the same spin polarization. The switched spin filling sequence demonstrates the possibility of using the trigonal warping effect to electrically access and manipulate the spin degree of freedom in bilayer graphene.