Room-temperature vacancy emission from jog on edge dislocation in FCC nickel under glide force

IF 5.6 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Scripta Materialia Pub Date : 2025-02-12 DOI:10.1016/j.scriptamat.2025.116597
Yifan Wang , Wu-Rong Jian , Wei Cai
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Abstract

Jogs, atomic-scale steps on dislocations, play an important role in crystal plasticity, yet they are often ignored in discrete dislocation dynamics (DDD) simulations due to their small sizes. While jogs on screw dislocations are known to move non-conservatively (i.e. climb) accompanied by vacancy emission, jogs on edge dislocations are commonly expected to move conservatively (i.e. glide) under ambient conditions. Here we report unexpected findings from molecular dynamics simulations of an edge dislocation containing a pair of unit jogs in face-centered cubic nickel at 300K. We observe that one of the jogs climbs and emits vacancies intermittently at higher stresses, unexpected at such a low temperature, as climb is typically associated with creep at roughly half of the melting temperature. Our results highlight the significance of the complex interplay between point defects (i.e., vacancies) and dislocations in room-temperature plasticity, suggesting that these interactions may be more significant than previously thought.

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滑动力作用下FCC镍中微动边缘位错的室温空位发射
位错上的原子级台阶在晶体塑性中起着重要作用,但由于其体积小,在离散位错动力学(DDD)模拟中往往被忽略。众所周知,螺旋位错上的移动是非保守的(即爬升),同时伴有空位发射,而边缘位错上的移动通常在环境条件下是保守的(即滑动)。在这里,我们报告了在300K时面心立方镍中包含一对单位慢跑的边缘位错的分子动力学模拟的意外发现。我们观察到,在较高的应力下,其中一个凹槽会间歇性地爬升并释放出空位,这在如此低的温度下是不可预料的,因为爬升通常与熔化温度的一半左右的蠕变有关。我们的研究结果强调了点缺陷(即空位)和位错在室温塑性中的复杂相互作用的重要性,表明这些相互作用可能比以前认为的更重要。
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来源期刊
Scripta Materialia
Scripta Materialia 工程技术-材料科学:综合
CiteScore
11.40
自引率
5.00%
发文量
581
审稿时长
34 days
期刊介绍: Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.
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