Construction of a novel surface plasmon resonance enhanced Z-scheme Cu|CuBi2O4/Bi/Bi2O3 photocatalyst film for effective organic pollutant degradation and simultaneous hydrogen evolution

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-02-11 DOI:10.1016/j.mssp.2025.109374
Dawei Fang , Xican Li , Shengwei Chi , Jiaqi Dang , Xue An , Taiyu Jin , Jun Wang
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Abstract

In this investigation, we successfully fabricate a Z-scheme Cu|CuBi2O4/Bi/Bi2O3 photocatalyst film with Bi nanoparticles that exhibit enhanced surface plasmon resonance (SPR) via an incomplete solid-phase reaction. The photocatalyst film achieves the degradation of organic pollutants on one surface while simultaneously enabling hydrogen evolution on the other surface. This design effectively addresses the challenge of recycling powdered photocatalysts. The structure, composition, and properties of the films are analyzed. Techniques used include XRD, SEM, TEM, EDX, XPS, PL, TPR, and EIS. The study examines the impacts of various factors on the photocatalytic performance of the Z-scheme Cu|CuBi2O4/Bi/Bi2O3 photocatalyst films. These factors include different compositions, calcination time and temperature, and initial substance concentration. The experiment reveals that after the photocatalyst film is calcined at 500 °C for 2.0 h, the degradation rate of methylene blue (MB) through photocatalysis is determined to be 88.6 %. The amount of hydrogen evolution is determined to be 397.32 μmol/dm2. The presence of Bi nanoparticles in the Z-scheme Cu|CuBi2O4/Bi/Bi2O3 photocatalyst film contributes to efficient Z-scheme charge separation and an enhanced SPR effect. This leads to improved performance. Simultaneously, the potential mechanism of the Z-scheme Cu|CuBi2O4/Bi/Bi2O3 photocatalytic system is elucidated. The photocatalyst film provides significant guidance in controlling organic pollutants and facilitating large-scale hydrogen production.

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新型表面等离子体共振增强z方案Cu|CuBi2O4/Bi/Bi2O3光催化膜的构建,用于有效降解有机污染物并同时析氢
在这项研究中,我们成功地制备了一种带有Bi纳米粒子的Z-scheme Cu|CuBi2O4/Bi/Bi2O3光催化剂薄膜,该薄膜通过不完全固相反应表现出增强的表面等离子体共振(SPR)。光催化膜在一个表面上实现了有机污染物的降解,同时在另一个表面上实现了析氢。这种设计有效地解决了回收粉末光催化剂的挑战。分析了薄膜的结构、组成和性能。使用的技术包括XRD, SEM, TEM, EDX, XPS, PL, TPR和EIS。研究了各种因素对Z-scheme Cu|CuBi2O4/Bi/Bi2O3光催化膜光催化性能的影响。这些因素包括不同的成分、煅烧时间和温度以及初始物质浓度。实验表明,光催化膜在500℃下煅烧2.0 h后,光催化对亚甲基蓝(MB)的降解率为88.6%。析氢量为397.32 μmol/dm2。在Z-scheme Cu|CuBi2O4/Bi/Bi2O3光催化膜中存在Bi纳米粒子有助于有效的Z-scheme电荷分离和增强的SPR效应。这将提高性能。同时,对z -方案Cu|CuBi2O4/Bi/Bi2O3光催化体系的潜在机理进行了探讨。光催化膜在控制有机污染物和促进大规模制氢方面具有重要的指导意义。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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