Erratum to “Design of an Extreme Low Cutoff Frequency Highpass Frontend for CMOS ISFET via Direct Tunneling Principle”

Abstract

In [1], in section III.E of the article, we calculate the equivalent tunnelling current according to equation (4) by using the value of Cg, eff as 1.679 fF, which is about 4.6 times smaller than the correct value. This leads to the wrong equivalent impedance value obtained in the final Fig. 10 is about 4.6 times larger than the correct value, and the equivalent impedance should be about 2.2 PΩ at this size, so according to the basis of the above, the article should be corrected as follows: