Carrier gas flow rate effects on additive-assisted low-temperature Y2O3 film deposition by atmospheric pressure plasma jet

Abstract

Yttrium oxide (Y₂O₃) film shows great potential as a corrosive resistant material in harsh environments, but Y₂O₃ film deposition methods require cost-effectiveness and high quality. To address these issues, we proposed a novel method of additive-enhancement to the Y₂O₃ precursor solution in plasma enhanced metal–organic chemical vapor deposition. Using this approach, we achieved Y${}_2$O${}_3$ film deposition at low cost, at low temperatures, and under atmospheric pressure conditions, specifically assisted by a microwave-excited plasma jet. Our results demonstrated that the Y₂O₃ surface morphology quality is notably enhanced, exhibiting a marked increase in particle density with a granular shape and well-covered homogeneous uniform coverage, suggesting enhanced nucleation and rapid growth with the increase of the carrier gas ($Q_c$) flow rate. Results show that the highest deposition rate for Y₂O₃ film was achieved 87.5 nm/min. Grazing incidence X-ray diffractometry revealed excellent polycrystalline structure of Y₂O₃ film. X-ray photoelectron spectroscopy indicated that an increased $Q_c$ flow rate shifts bonding from Y–O–Si to Y–O–C, revealing chemical interactions with organic residues or carbon-containing precursor solutions within the film. This method of using PE-MOCVD provides a new pathway to low-cost, low-temperature, and effective deposition of Y${}_2$O${}_3$ films.