Topological and optical properties of 2,7-dichlorofluorescein thin films electrical characterization of carbon/dichlorofluorescein/p-Si/Al photovoltaic devices

Abstract

Herein, the spin-coating technique was used to fabricate Dichlorofluorescein films and surface roughness parameters such as the valley depth, R_v and peak profile, and R_{p, which} were studied by atomic force microscopy, AFM. The thermal stability of the 2,7-dichlorofluorescein powder was investigated, and the sublimation point was estimated. The optical constants of the dichlorofluorescein films were calculated using transmittance and reflection. The optical transition and the energy band gap were extracted for manufactured nanostructure dichlorofluorescein films. The Wemple-DiDomenico was interpreted as a single oscillator model to investigate and estimate the dispersion energy, E_d and strength, E_o. Moreover, the recorded optical dispersion was analyzed using the Cauchy and Conrady models. The investigated SELF has two maximum values, mainly at hυ = 1.253 eV and 4.065 eV, which correlate to the two prominent positions where the real permittivity changes its polarity. The ideality factor, the reverse saturation current and barrier height are estimated. Moreover, the microelectronic parameters such as the rectification ratio, series resistance, R_s and shunt resistance R_sh for the manufactured C/dichlorofluorescein/p-Si/Al devices are investigated and estimated. An impedance spectroscopy (IS) method based on the parallel connection was used to investigate the dynamic behaviour of the charge carrier across dichlorofluorescein/p-Si junctions at different frequencies from 5 kHz to 5 MHz in the applied voltage range from 0.28 V to 0.8W. Finally, the photovoltaic behaviour and the response to the normal light (Responsivity and LDR parameters) Carbon/Dichlorofluorescein/p-Si/Al were investigated and characterized.