Precision material removal and hardness reduction in silicon carbide using ultraviolet nanosecond pulse laser

IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Applied Physics A Pub Date : 2025-02-17 DOI:10.1007/s00339-025-08296-2
Hsin-Yi Tsai, Yu-Hsuan Lin, Kuo-Cheng Huang, Chen-Ju Lee, J. Andrew Yeh, Yi Yang, Chien-Fang Ding
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Abstract

Silicon carbide (SiC), as a key material in the third-generation semiconductor industry, holds critical importance due to its superior thermal conductivity, high breakdown voltage, and wide bandgap. However, the conventional chemical mechanical polishing (CMP) process used in SiC wafer manufacturing is time-consuming and resource-intensive, involving significant material consumption and prolonged processing times. In this study, we explored the application of laser-assisted dry ablation as a pre-treatment for CMP. The experimental results showed that the single laser ablation depth of SiC is about 2 μm, and demonstrated that a laser spot overlap rate between 30% and 60% can generate a relatively lower surface roughness of SiC. This optimal range of overlap ensures a smoother ablation process, minimizing the irregularities on the SiC wafer surface. After a single pass of laser dry ablation, SiC hardness can be reduced to less than 3% of its original value, while material removal depth can be precisely controlled by adjusting the number of laser passes. With 50 repetitions, a material removal depth of nearly 30 μm was achieved. This reduction in hardness and enhanced material removal directly contribute to improve the efficiency of subsequent CMP processes by reducing polishing time and wear on grinding heads. In addition, after more than 5 times of laser treatment and then wet grinding, the thickness achievement rate can be increased from 73 to 93%. These results provide the important academic reference value. The integration of laser-assisted ablation into SiC wafer processing presents significant advantages in terms of increasing production throughput and reducing overall manufacturing costs. By simplifying the polishing steps and minimizing consumable usage, this approach offers a promising avenue for industrial applications, particularly in enhancing SiC wafer yield and optimizing semiconductor production workflows.

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紫外纳秒脉冲激光在碳化硅中的精密材料去除和降硬度
碳化硅(SiC)具有优异的导热性、高击穿电压和宽带隙等特点,是第三代半导体产业的关键材料。然而,传统的化学机械抛光(CMP)工艺用于SiC晶圆制造是耗时和资源密集型的,涉及大量的材料消耗和较长的加工时间。在这项研究中,我们探讨了激光辅助干消融作为CMP预处理的应用。实验结果表明,单次激光烧蚀SiC的深度约为2 μm,激光光斑重叠率在30% ~ 60%之间时,SiC的表面粗糙度相对较低。这种最佳的重叠范围确保了更平滑的烧蚀过程,最大限度地减少了SiC晶圆表面的不规则性。激光干烧蚀单道次后,SiC硬度可降至原始硬度的3%以下,通过调整激光烧蚀道次可精确控制材料去除深度。经过50次重复,材料去除深度接近30 μm。硬度的降低和材料去除的增强,通过减少抛光时间和磨头的磨损,直接有助于提高后续CMP工艺的效率。另外,经过5次以上激光处理后再湿磨,厚度成成率可由73%提高到93%。这些结果具有重要的学术参考价值。将激光辅助烧蚀集成到SiC晶圆加工中,在提高生产吞吐量和降低整体制造成本方面具有显着优势。通过简化抛光步骤和最大限度地减少消耗品的使用,这种方法为工业应用提供了一条有前途的途径,特别是在提高SiC晶圆产量和优化半导体生产工作流程方面。
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来源期刊
Applied Physics A
Applied Physics A 工程技术-材料科学:综合
CiteScore
4.80
自引率
7.40%
发文量
964
审稿时长
38 days
期刊介绍: Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.
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