High-Performance Ag NPs/MoS₂ QDs/SWCNTs/Si Near-Infrared Photodetector

IF 4.3 2区 综合性期刊 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Sensors Journal Pub Date : 2025-01-14 DOI:10.1109/JSEN.2025.3526951
Qian Liu;Jun Chen
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Abstract

This article presents a Ag nanoparticles (NPs)/MoS2 quantum dots (QDs)/single-walled carbon nanotubes (SWCNTs)/Si photodetector operating in the near-infrared (NIR) region. The QDs and metal NPs are combined on the prepared photodetector to improve the performance through the optical absorption enhancement of QDs and the local surface plasmon resonance effect of metal NPs. Meanwhile, the speed of the device is improved by the high mobility of SWCNTs. At −1 V, the responsivity of the photodetector is 454.7 mA/W for the 808-nm laser and 347.5 mA/W for the 1064-nm laser. The detectivity of this photograph detector reaches $2.75\times 10^{{11}}$ Jones at 808 nm and $2.12\times 10^{{11}}$ Jones at 1064 nm. It also has a good response time under high-frequency illumination, with a rise time of $2.5~\mu $ s and a fall time of $62~\mu $ s. Such Ag NPs/MoS2 QDs/SWCNTs/Si heterostructured photodetectors have high performance and can be widely used for NIR photodetection.
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高性能Ag NPs/MoS₂QDs/SWCNTs/Si近红外光电探测器
本文介绍了一种工作在近红外(NIR)区域的银纳米粒子(NPs)/二硫化钼量子点(QDs)/单壁碳纳米管(SWCNTs)/硅光电探测器。将量子点和金属NPs结合在光电探测器上,通过量子点的光吸收增强和金属NPs的局部表面等离子体共振效应来提高光电探测器的性能。同时,SWCNTs的高迁移率提高了器件的速度。在−1 V时,光电探测器对808 nm激光器的响应度为454.7 mA/W,对1064 nm激光器的响应度为347.5 mA/W。该探测器在808 nm处的探测率为$2.75\ × 10^{{11}}$ Jones,在1064 nm处的探测率为$2.12\ × 10^{{11}}$ Jones。它在高频照明下也具有良好的响应时间,上升时间为$2.5~\mu $ s,下降时间为$62~\mu $ s。这种Ag NPs/MoS2 QDs/SWCNTs/Si异质结构光电探测器具有高性能,可广泛用于近红外光电探测。
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来源期刊
IEEE Sensors Journal
IEEE Sensors Journal 工程技术-工程:电子与电气
CiteScore
7.70
自引率
14.00%
发文量
2058
审稿时长
5.2 months
期刊介绍: The fields of interest of the IEEE Sensors Journal are the theory, design , fabrication, manufacturing and applications of devices for sensing and transducing physical, chemical and biological phenomena, with emphasis on the electronics and physics aspect of sensors and integrated sensors-actuators. IEEE Sensors Journal deals with the following: -Sensor Phenomenology, Modelling, and Evaluation -Sensor Materials, Processing, and Fabrication -Chemical and Gas Sensors -Microfluidics and Biosensors -Optical Sensors -Physical Sensors: Temperature, Mechanical, Magnetic, and others -Acoustic and Ultrasonic Sensors -Sensor Packaging -Sensor Networks -Sensor Applications -Sensor Systems: Signals, Processing, and Interfaces -Actuators and Sensor Power Systems -Sensor Signal Processing for high precision and stability (amplification, filtering, linearization, modulation/demodulation) and under harsh conditions (EMC, radiation, humidity, temperature); energy consumption/harvesting -Sensor Data Processing (soft computing with sensor data, e.g., pattern recognition, machine learning, evolutionary computation; sensor data fusion, processing of wave e.g., electromagnetic and acoustic; and non-wave, e.g., chemical, gravity, particle, thermal, radiative and non-radiative sensor data, detection, estimation and classification based on sensor data) -Sensors in Industrial Practice
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