Cauchy-like approximation of continuous crystal potential for axially channeled electrons

Abstract

We present advancements in the development of a computer program designed to simulate channeling radiation based on classical approaches. Our work focuses on optimizing the code to enable faster simulations of axial channeling radiation produced by relativistic electrons in germanium (Ge) and silicon (Si) single crystals. By introducing a Cauchy-like approximation for describing the axial potential, we replace the traditional Doyle-Turner approximation, resulting in a substantial improvement in computational efficiency and 14-fold increase in simulation speed. These enhancements not only accelerate the simulation process but also show rather accurate predictions of channeling radiation characteristics in various crystalline materials.