A 3-kV GaN MISHEMT With High Reliability and a Power Figure-of-Merit of 685 MW/cm²

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of the Electron Devices Society Pub Date : 2025-02-13 DOI:10.1109/JEDS.2025.3533920

Yifan Cui;Minghao He;Jianguo Chen;Yang Jiang;Chuying Tang;Qing Wang;Hongyu Yu

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Abstract

In this letter, GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) are fabricated on Si substrates with an ultra-high breakdown voltage of over 3 kV using a 90-nm in situ

$\textrm {SiN}_{\mathrm { X}}$

layer as both the gate dielectric and surface passivation. The devices exhibit low off-state leakage current (on/off ratio of

$10{^{{9}}}$

), high forward gate breakdown voltage (>122 V), and state-of-the-art figure of merit (685 MW/cm2). Moreover, the reliability of the in situ

$\textrm {SiN}_{\mathrm { X}}$

dielectric is evaluated through the high-temperature gate bias test. The results are fitted with a Weibull distribution, estimating a 10-year estimation of 100 ppm. The maximum gate-source voltage of over 70 V is obtained. This letter presents a strategy for mass producing GaN-on-Si MISHEMTs with high breakdown voltage and reliability.

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在这封信中，利用 90 纳米原位 $\textrm {SiN}_{\mathrm { X}}$ 层作为栅介质和表面钝化层，在硅衬底上制造出了具有超过 3 kV 超高击穿电压的 GaN 金属绝缘体-半导体高电子迁移率晶体管 (MISHEMT)。这些器件具有较低的关态漏电流（开/关比为 10{^{{9}}$ ）、较高的正向栅极击穿电压（>122 V）和最先进的优越性能（685 MW/cm2）。此外，还通过高温栅极偏压测试评估了原位 $\textrm {SiN}_{\mathrm { X}}$ 电介质的可靠性。结果采用 Weibull 分布拟合，估计 10 年估计值为 100 ppm。获得的最大栅极-源极电压超过 70 V。这封信提出了一种大规模生产具有高击穿电压和可靠性的硅基氮化镓 MISHEMT 的策略。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.