Random Number Generators and Spiking Neurons from Metal Oxide/Small Molecules Heterojunction N-Shape Switching Transistors (Adv. Funct. Mater. 8/2025)

Abstract

Field-Effect Transistors

In article number 2411348, Amit R. Trivedi, Hocheon Yoo, and co-workers propose a hybrid FET using n-type ZTO and p-type DNTT for random number generation and spiking neurons. Trap sites causing instability are used for random number generation while an interlayer improves device performance by reducing hysteresis. These improvements enhance negative transconductance characteristics, where a spiking neuron is then demonstrated to mimic neuronal behavior.