A Spot-Area Method to Evaluate the Incidence Angle Modifier of Photovoltaic Devices-Part 2: Modules (Differential Method)

IF 2.6 3区 工程技术 Q3 ENERGY & FUELS IEEE Journal of Photovoltaics Pub Date : 2025-01-09 DOI:10.1109/JPHOTOV.2024.3521121
Mauro Pravettoni;Min Hsian Saw;Muhammad Nabil Bin Abdul Aziz;Stephen En Rong Tay
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Abstract

In Part 1 of our article, we presented a method to quantify the incidence angle modifier (IAM) of photovoltaic (PV) devices, which differs from the methods proposed in IEC 61853-2 through the following: it utilizes a spot-area irradiation, delivered by an optical fiber system, a customized angle probe holder, and a current-to-voltage converter. Part 1 focused on single-cell devices and presented the validation of the new method on two different cell architectures. In Part 2, we generalize that method to commercial-size silicon PV modules, mirroring by the approach already used for module-level spectral responsivity measurements described in IEC 60904-8:2014. The proposed method is motivated by inclusion in the currently ongoing revision of IEC 61853-2, providing research centers and testing laboratories with an additional option to perform IAM measurements indoors. The reproducibility of the proposed method is addressed in this work via interlaboratory comparison with a different measurement method for the same quantity and with a detailed uncertainty analysis.
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光电器件入射角修正量的点面积法-第二部分:模块(微分法)
在本文的第1部分中,我们提出了一种量化光伏(PV)器件入射角修正器(IAM)的方法,该方法与IEC 61853-2中提出的方法有以下不同:它利用由光纤系统、定制角度探头支架和电流-电压转换器提供的点区域照射。第1部分侧重于单细胞设备,并介绍了在两种不同的细胞架构上验证新方法的方法。在第2部分中,我们将该方法推广到商业尺寸的硅光伏模块,通过IEC 60904-8:2014中描述的用于模块级光谱响应度测量的方法进行镜像。拟议的方法被纳入目前正在进行的IEC 61853-2修订版,为研究中心和测试实验室提供了在室内进行IAM测量的额外选择。本文通过与相同数量的不同测量方法的实验室间比较和详细的不确定度分析来解决所提出方法的可重复性问题。
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来源期刊
IEEE Journal of Photovoltaics
IEEE Journal of Photovoltaics ENERGY & FUELS-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
7.00
自引率
10.00%
发文量
206
期刊介绍: The IEEE Journal of Photovoltaics is a peer-reviewed, archival publication reporting original and significant research results that advance the field of photovoltaics (PV). The PV field is diverse in its science base ranging from semiconductor and PV device physics to optics and the materials sciences. The journal publishes articles that connect this science base to PV science and technology. The intent is to publish original research results that are of primary interest to the photovoltaic specialist. The scope of the IEEE J. Photovoltaics incorporates: fundamentals and new concepts of PV conversion, including those based on nanostructured materials, low-dimensional physics, multiple charge generation, up/down converters, thermophotovoltaics, hot-carrier effects, plasmonics, metamorphic materials, luminescent concentrators, and rectennas; Si-based PV, including new cell designs, crystalline and non-crystalline Si, passivation, characterization and Si crystal growth; polycrystalline, amorphous and crystalline thin-film solar cell materials, including PV structures and solar cells based on II-VI, chalcopyrite, Si and other thin film absorbers; III-V PV materials, heterostructures, multijunction devices and concentrator PV; optics for light trapping, reflection control and concentration; organic PV including polymer, hybrid and dye sensitized solar cells; space PV including cell materials and PV devices, defects and reliability, environmental effects and protective materials; PV modeling and characterization methods; and other aspects of PV, including modules, power conditioning, inverters, balance-of-systems components, monitoring, analyses and simulations, and supporting PV module standards and measurements. Tutorial and review papers on these subjects are also published and occasionally special issues are published to treat particular areas in more depth and breadth.
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Table of Contents Front Cover IEEE Journal of Photovoltaics Publication Information Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on “Ultrawide Band Gap Semiconductor Device for RF, Power and Optoelectronic Applications” IEEE Journal of Photovoltaics Information for Authors
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