Eva Pugliese, Damien Coutancier, Paul-Alexis Pavard, Julien Hervochon, Bram van der Linden, Nicolas Casaretto, Sophie Bourcier, Geoffrey Pourtois, Muriel Bouttemy, Audrey Auffrant and Nathanaelle Schneider
{"title":"Unveiling surface reactivity: the crucial role of auxiliary ligands in gallium amidinate-based precursors for atomic layer deposition†","authors":"Eva Pugliese, Damien Coutancier, Paul-Alexis Pavard, Julien Hervochon, Bram van der Linden, Nicolas Casaretto, Sophie Bourcier, Geoffrey Pourtois, Muriel Bouttemy, Audrey Auffrant and Nathanaelle Schneider","doi":"10.1039/D4DT03498H","DOIUrl":null,"url":null,"abstract":"<p >Two novel gallium precursors for Atomic Layer Deposition (ALD), <strong>LGaMe<small><sub>2</sub></small></strong> and <strong>LGa(NMe<small><sub>2</sub></small>)<small><sub>2</sub></small></strong> with L = <em>N</em>,<em>N</em>′-di-<em>tert</em>-butylacetamidinato, were successfully synthesised from a carbodiimide and gallium trichloride. The compounds were characterised by NMR spectroscopy and HR-mass spectrometry, confirming their monomeric nature. Their surface reactivity under ALD conditions with H<small><sub>2</sub></small>O and H<small><sub>2</sub></small>S co-reactants was explored using <em>in situ</em> quartz crystal microbalance (QCM) measurements. <strong>LGaMe<small><sub>2</sub></small></strong>, bearing methyl ligands, was found to inhibit film growth, with deposition halting after three cycles. In contrast, <strong>LGa(NMe<small><sub>2</sub></small>)<small><sub>2</sub></small></strong> facilitated the successful growth of films using both H<small><sub>2</sub></small>O and H<small><sub>2</sub></small>S leading to Ga<small><sub>2</sub></small>O<small><sub>3</sub></small> and Ga<small><sub>2</sub></small>S<small><sub>3</sub></small> respectively, as confirmed by additional thin film <em>ex situ</em> characterisation. This study underscores the critical role of auxiliary X ligands (here Me or NMe<small><sub>2</sub></small>) in determining ALD process efficiency, and emphasises the complexity and unique nature of surface chemistry compared to solution-phase behaviour.</p>","PeriodicalId":71,"journal":{"name":"Dalton Transactions","volume":" 12","pages":" 5182-5191"},"PeriodicalIF":3.3000,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Dalton Transactions","FirstCategoryId":"92","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/dt/d4dt03498h","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}
引用次数: 0
Abstract
Two novel gallium precursors for Atomic Layer Deposition (ALD), LGaMe2 and LGa(NMe2)2 with L = N,N′-di-tert-butylacetamidinato, were successfully synthesised from a carbodiimide and gallium trichloride. The compounds were characterised by NMR spectroscopy and HR-mass spectrometry, confirming their monomeric nature. Their surface reactivity under ALD conditions with H2O and H2S co-reactants was explored using in situ quartz crystal microbalance (QCM) measurements. LGaMe2, bearing methyl ligands, was found to inhibit film growth, with deposition halting after three cycles. In contrast, LGa(NMe2)2 facilitated the successful growth of films using both H2O and H2S leading to Ga2O3 and Ga2S3 respectively, as confirmed by additional thin film ex situ characterisation. This study underscores the critical role of auxiliary X ligands (here Me or NMe2) in determining ALD process efficiency, and emphasises the complexity and unique nature of surface chemistry compared to solution-phase behaviour.
期刊介绍:
Dalton Transactions is a journal for all areas of inorganic chemistry, which encompasses the organometallic, bioinorganic and materials chemistry of the elements, with applications including synthesis, catalysis, energy conversion/storage, electrical devices and medicine. Dalton Transactions welcomes high-quality, original submissions in all of these areas and more, where the advancement of knowledge in inorganic chemistry is significant.