{"title":"Zinc vanadate/Magnesium oxide heterostructures: A novel electrode material for high power density hybrid supercapacitors","authors":"Rimsha Aslam , Yasir Javed , Yasir Jamil , Muhammad Asif Hanif","doi":"10.1016/j.mssp.2025.109414","DOIUrl":null,"url":null,"abstract":"<div><div>Metal Vanadate-based hybrid supercapacitors show great potential as new alternatives for battery and energy storage applications on a limited basis due to their combined and complementing benefits. The present study focused on synthesizing magnesium oxide (MgO), zinc vanadate Zn<sub>3</sub>(VO<sub>4</sub>)<sub>2</sub>, and Zn<sub>3</sub>(VO<sub>4</sub>)<sub>2</sub>/MgO heterostructures and optimized their electrochemical response for hybrid supercapacitors. The XRD analysis revealed that the crystallite size was varied from 22 to 43 nm. The scanning electron microscope (SEM) images showed vertically aligned nanosheets for Zn<sub>3</sub>(VO<sub>4</sub>)<sub>2</sub>/MgO heterostructures. The EDX mapping of the heterostructure revealed the presence of magnesium (Mg), oxygen (O), zinc (Zn), and vanadium (V). The Zn<sub>3</sub>(VO<sub>4</sub>)<sub>2</sub>/MgO (2:1) heterostructure showed the best electrochemical response with a specific capacity of 995.5 Cg<sup>-1</sup> at 1 Ag<sup>-1</sup> current density. Diffusive-controlled processes contributed significantly to the charge storage process with 63 % contribution at a scan rate of 50 mVs<sup>−1</sup>. The designed Zn<sub>3</sub>(VO<sub>4</sub>)<sub>2</sub>/MgO (2:1)//AC hybrid device offered a specific capacity of 702 Cg<sup>-1</sup> (2 Ag<sup>-1</sup>) with an exceptional power density of 33233.40 Wkg<sup>-1</sup> (4 Ag<sup>-1</sup>). These results indicated the improved efficiency of the Zn<sub>3</sub>(VO<sub>4</sub>)<sub>2</sub>/MgO (2:1) heterostructure, confirming its potential as a material electrode for hybrid supercapacitors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109414"},"PeriodicalIF":4.2000,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125001519","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Metal Vanadate-based hybrid supercapacitors show great potential as new alternatives for battery and energy storage applications on a limited basis due to their combined and complementing benefits. The present study focused on synthesizing magnesium oxide (MgO), zinc vanadate Zn3(VO4)2, and Zn3(VO4)2/MgO heterostructures and optimized their electrochemical response for hybrid supercapacitors. The XRD analysis revealed that the crystallite size was varied from 22 to 43 nm. The scanning electron microscope (SEM) images showed vertically aligned nanosheets for Zn3(VO4)2/MgO heterostructures. The EDX mapping of the heterostructure revealed the presence of magnesium (Mg), oxygen (O), zinc (Zn), and vanadium (V). The Zn3(VO4)2/MgO (2:1) heterostructure showed the best electrochemical response with a specific capacity of 995.5 Cg-1 at 1 Ag-1 current density. Diffusive-controlled processes contributed significantly to the charge storage process with 63 % contribution at a scan rate of 50 mVs−1. The designed Zn3(VO4)2/MgO (2:1)//AC hybrid device offered a specific capacity of 702 Cg-1 (2 Ag-1) with an exceptional power density of 33233.40 Wkg-1 (4 Ag-1). These results indicated the improved efficiency of the Zn3(VO4)2/MgO (2:1) heterostructure, confirming its potential as a material electrode for hybrid supercapacitors.
期刊介绍：
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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