Localized creation of bubble domains in Fe3GaTe2 by conductive atomic force microscopy

IF 8.7 Q1 CHEMISTRY, PHYSICAL Applied Surface Science Advances Pub Date : 2025-02-22 DOI:10.1016/j.apsadv.2025.100718
Chak-Ming Liu , Yi-Jia Liu , Po-Chun Chang , Po-Wei Chen , Masahiro Haze , Ming-Hsien Hsu , Neleena Nair Gopakumar , Yishui Zhou , Yung-Hsiang Tung , Sabreen Hammouda , Chao-Hung Du , Yukio Hasegawa , Yixi Su , Hsiang-Chih Chiu , Wen-Chin Lin
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Abstract

This study demonstrates the localized creation of bubble domains in the two-dimensional (2D) ferromagnetic material Fe₃GaTe₂ using conductive atomic force microscopy. By applying bias voltage to the tip under a perpendicular magnetic field, sufficient current is generated to induce localized Joule heating, transforming random stripe domains into bubble domains. The bubble domains were successfully induced under ambient conditions at room temperature and remained stable, as confirmed by magnetic force microscopy. For Fe₃GaTe₂ layers with thicknesses of 1 μm, 200 nm, and 100 nm, the average diameters of bubble domains were measured at 620 ± 100 nm, 325 ± 80 nm, and 230 ± 70 nm, respectively, approximately 20 % larger than the pristine stripe width. By optimizing parameters such as bias voltage, application duration, and tip temperature based on Fe₃GaTe₂ thickness, the induced bubble domain density could be precisely controlled, ranging from few bubble domains within areas < 5 μm² to nearly 10⁴ bubble domains within 1200 μm². Furthermore, multi-point triggering demonstrated the re-writability of the domain structures, with non-overlapping domains remaining unaffected. These findings offer critical insights into the tunability of magnetic textures in 2D ferromagnets, providing a foundation for developing next-generation spintronic devices based on 2D heterostructures.
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导电原子力显微镜在Fe3GaTe2中局部生成气泡域
这项研究展示了利用导电原子力显微镜在二维(2D)铁磁材料Fe₃GaTe₂中局部产生气泡域。在垂直磁场的作用下,通过对尖端施加偏置电压,产生足够的电流诱导局部焦耳加热,将随机条纹域转化为气泡域。在室温条件下成功诱导了气泡域,并通过磁力显微镜证实了其稳定性。对于厚度为1 μm、200 nm和100 nm的Fe₃GaTe₂层,气泡域的平均直径分别为620±100 nm、325±80 nm和230±70 nm,比原始条纹宽度大约20%。通过对Fe₃GaTe 2厚度的偏置电压、应用时间、尖端温度等参数进行优化,可以精确控制诱导气泡域的密度,范围从区域内的几个气泡域;5 μm²到1200 μm²内的近10⁴气泡域。此外,多点触发证明了域结构的可重写性,不重叠的域不受影响。这些发现对二维铁磁体中磁性织构的可调性提供了重要的见解,为开发基于二维异质结构的下一代自旋电子器件提供了基础。
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CiteScore
8.10
自引率
1.60%
发文量
128
审稿时长
66 days
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