Insights Into Temperature Sensitivity Analysis of Polarity Controlled Charge Plasma Based Tunable Arsenide/Antimonide Tunneling Interfaced Junctionless TFET

Abstract

This research delves into the temperature-dependent performance of a novel polarity-controlled charge plasma-based InAs/AlGaSb tunneling interfaced junctionless TFET (H-JLTFET). The device leverages the benefits of both charge plasma and heterojunction engineering to enhance device performance. Comprehensive simulations were conducted to assess the impact of temperature on device characteristics. Results indicate that while the device exhibits promising ON-state current and high-frequency metrics, with a peak f_T of 417 GHz and an f_max of 4390 GHz, the subthreshold region is significantly influenced by temperature. The observed increase in OFF-state current and degradation in subthreshold swing highlight the need for careful thermal management and circuit design. Furthermore, the study reveals a moderate impact of temperature on intrinsic delay and a slight increase in ambipolar current. Overall, this work provides valuable insights into the thermal behavior of H-JLTFETs, paving the way for optimized device design and reliable operation in various applications.