Competitive mechanism between light extraction efficiency and sidewall passivated effect in the green micro-LEDs with varied thickness of Al₂O₃layer.

IF 2.8 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Nanotechnology Pub Date : 2025-02-27 DOI:10.1088/1361-6528/adb852

Youcai Deng, Denghai Li, Yurong Dai, Zongmin Lin, Youqin Lin, Zongyuan Liu, Xinxing Chen, Hao-Chung Kuo, Zhong Chen, Shouqiang Lai, Tingzhu Wu

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Abstract

In this study, green micro-light-emitting diodes (μ-LEDs) with Al₂O₃layers of varying thicknesses (0, 30, 60, and 90 nm) was fabricated using atomic layer deposition (ALD) technology. The optoelectronic characteristics of devices was measured and investigated. Current-voltage (I-V) measurements indicate that the ALD passivation layer effectively reduces leakage current. By applying theABC + f(n)model to analyze external quantum efficiency, the internal physical mechanisms that the ALD passivation layer enhances the optoelectronic performance of greenμ-LEDs was identified. Optical simulations demonstrated the transmittance relationship for different ALD passivation layer thicknesses, explaining improvements of light extraction efficiency. Furthermore, aging tests confirmed that the ALD passivation layer significantly increases the stability of greenμ-LEDs. These findings offer valuable insights for enhancing the luminous efficiency and reliability of greenμ-LEDs.

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不同厚度 Al2O3 层的绿色微型 LED 中光萃取效率与侧壁钝化效应之间的竞争机制。

本研究采用原子层沉积（ALD）技术制备了不同厚度（0、30、60和90 nm） Al2O3层的绿色微发光二极管（μ- led）。对器件的光电特性进行了测量和研究。电流-电压（I -V）测量表明，ALD钝化层有效地降低了泄漏电流。通过ABC + f(n)模型分析外量子效率（EQE），确定了ALD钝化层提高绿色μ- led光电性能的内部物理机制。光学模拟显示了不同ALD钝化层厚度的透射率关系，解释了光提取效率（LEE）的提高。老化实验证实ALD钝化层显著提高了绿色μ- led的稳定性。这些发现为提高绿色μ- led的发光效率和可靠性提供了有价值的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nanotechnology 工程技术-材料科学：综合

CiteScore

7.10

自引率

5.70%

发文量

820

审稿时长

2.5 months

期刊介绍： The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.