High-efficiency wideband inductor-less platinum-band CMOS rectifier

Abstract

This work introduces a novel approach to designing high-efficiency wideband high-power rectifier using 180-nm complementary metal–oxide–semiconductor (CMOS) technology. Unlike conventional rectifier design configuration, where inductors are needed for impedance matching, the proposed method employs an inductor-less design taking advantage of parasitic capacitance of auxiliary rectifier. This approach results in high efficiency at wide band for low frequency (50 MHz) until 1.4 GHz at the increased input power. Measurement results demonstrate outstanding power conversion efficiency (PCE) exceeding 40% and an output voltage surpassing 4V across the 50 MHz to 1.4 GHz range at 17 dBm input power (P_in). Furthermore, the peak PCE of 48.78% was achieved at a carrier frequency of 250 MHz.