Radical Molecular Network-Buffer Minimizes Photovoltage Loss in FAPbI₃ Perovskite Solar Cells

IF 26.8 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Advanced Materials Pub Date : 2025-02-24 DOI:10.1002/adma.202417289
Mubai Li, Yang Jiang, Shaoyu Chen, Zhangsheng Shi, Qingyun He, Junbo Wang, Mengyang Wu, Chongyu Zhong, Xiangru Zhao, Pinghui Yang, Zhizhong Lin, Jingya Lai, Renzhi Li, Jingjin Dong, Aifei Wang, Mathias Uller Rothmann, Yi-Bing Cheng, Wei Huang, Tianshi Qin, Wei Li, Fangfang Wang
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Abstract

Formamidinium lead iodide (FAPbI₃) perovskite solar cells (PSCs) hold immense potential for high-efficiency photovoltaics, but maximizing their open-circuit voltage (VOC) remains challenging. Targeting the inherently stable {111}c-dominant facets is a promising approach for enhancing stability, but their formation typically suffers from high defect densities and disordered growth. This study introduces a novel approach using an in situ polymerizable radical molecule, ATEMPO, as an additive to address these issues. ATEMPO preferentially interacts with the {111}c perovskite facets, guiding their growth and forming a “radical molecular network-buffer” upon polymerization. The network effectively mitigates lattice strain, suppresses defect formation, enhances charge transport via redox-mediated hopping, and provides a hydrophobic barrier, significantly improving moisture resistance. This strategy yields high-quality, {111}c -oriented FAPbI₃ films, leading to a champion PCE of 25.28% with a remarkably high VOC of 1.203 V, corresponding to an energy loss (Eloss) of only 0.297 eV, among the highest VOC reported for FAPbI₃-based PSCs. Furthermore, a mini-module fabricate with an active area of 12.5 cm2 achieve a high PCE of 21.39%. the work paves the way for developing high-performance, stable PSCs with minimized photovoltage loss. Furthermore, it offers a promising strategy to enhance device longevity and address environmental concerns.

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自由基分子网络缓冲器最小化FAPbI₃钙钛矿太阳能电池的光电压损失
碘化甲醛铅(FAPbI₃)钙钛矿太阳能电池(PSCs)在高效光伏发电方面具有巨大的潜力,但最大化它们的开路电压(VOC)仍然具有挑战性。瞄准固有稳定的{111}c主导面是提高稳定性的一种有希望的方法,但它们的形成通常受到高缺陷密度和无序生长的影响。本研究介绍了一种使用可原位聚合的自由基分子ATEMPO作为添加剂来解决这些问题的新方法。ATEMPO优先与{111}c钙钛矿面相互作用,引导其生长并在聚合时形成“自由基分子网络缓冲”。该网络有效地减轻了晶格应变,抑制了缺陷的形成,通过氧化还原介导的跳变增强了电荷传输,并提供了疏水屏障,显著提高了抗湿性。这种策略产生了高质量的,面向{111}c的FAPbI₃薄膜,导致了25.28%的PCE和1.203 V的非常高的VOC,对应的能量损失(Eloss)仅为0.297 eV,这是基于FAPbI₃的PSCs报道的最高VOC之一。此外,一个有效面积为12.5 cm2的迷你模块制造实现了21.39%的高PCE。这项工作为开发具有最小光电压损耗的高性能、稳定的psc铺平了道路。此外,它提供了一个有前途的策略,以提高设备寿命和解决环境问题。
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来源期刊
Advanced Materials
Advanced Materials 工程技术-材料科学:综合
CiteScore
43.00
自引率
4.10%
发文量
2182
审稿时长
2 months
期刊介绍: Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.
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