Peptide-Engineered Interface to Improve the Efficiency of Pure Red Tin Halide Perovskite LEDs by Controlling Crystallization and Reducing Oxidation

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2025-02-14 DOI:10.1021/acsaelm.4c01935
Zhixian Wu, Xueyong Zheng, Chunli Jiang, Junhan Xie, Weimin Liu, Bo Li, Hechun Lin, Hui Peng* and Chunhua Luo*, 
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Abstract

Tin (Sn)-based perovskite light-emitting diodes (PeLEDs) have garnered significant attention owing to their superior optoelectronic properties, affordable solution processing, and environmental friendliness. However, the properties of Sn-PeLEDs trail those of their lead (Pb) counterparts. The main obstacle is the easy oxidation of Sn2+ to Sn4+ as well as fast crystallization, leading to poor film quality with many defects. Herein, a convenient and effective interface engineering strategy is reported to fabricate (2-thiopheneethylamine)2SnI4 (TEA2SnI4) PeLEDs by introducing different peptides into the PEDOT:PSS hole-transport layer (HTL). Benefiting from the interaction between the peptide molecules and the Sn-perovskite nuclei, the crystallization dynamics are effectively adjusted, leading to an improved film morphology. At the same time, the multiple functional groups of peptides can suppress Sn2+ oxidation and passivate interface defects. Therefore, perovskite films with improved luminescence efficiency are obtained. The perovskite films are further used for the fabrication of pure red PeLEDs with enhanced performance. In particular, the optimized devices based on Leu-Gly-Gly (LGG) achieve a peak external quantum efficiency of 0.5% and a brightness of 136 cd m–2, which are about 2 and 3 times larger, respectively, than those of the reference device. This research offers a general strategy to improve the performance of Sn-PeLEDs via peptide interface engineering.

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多肽工程界面通过控制结晶和减少氧化提高纯红卤化锡包晶发光二极管的效率
锡(Sn)基钙钛矿发光二极管(PeLEDs)因其优越的光电性能、可负担的溶液处理和环境友好性而受到广泛关注。然而,sn - peled的性能落后于它们的铅(Pb)对应物。主要障碍是Sn2+容易氧化为Sn4+,结晶速度快,导致薄膜质量差,缺陷多。本文报道了一种简便有效的界面工程策略,通过在PEDOT:PSS空穴传输层(html)中引入不同的肽来制备(2-噻吩乙基胺)2SnI4 (TEA2SnI4) peled。得益于肽分子与sn -钙钛矿核之间的相互作用,有效地调节了结晶动力学,从而改善了薄膜的形态。同时,多肽的多个官能团可以抑制Sn2+氧化,钝化界面缺陷。因此,获得了发光效率提高的钙钛矿薄膜。钙钛矿薄膜进一步用于制造具有增强性能的纯红色ped。特别是,基于Leu-Gly-Gly (LGG)的优化器件的峰值外量子效率为0.5%,亮度为136 cd m-2,分别是参考器件的2倍和3倍左右。本研究为通过肽界面工程改善sn - peled的性能提供了一种通用策略。
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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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