Novel pyrochlores in the Bi2O3–MgO–Ta2O5 (BMT) system: Synthesis optimisation, phase equilibria and dielectric properties

IF 6.7 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Journal of Science: Advanced Materials and Devices Pub Date : 2025-02-19 DOI:10.1016/j.jsamd.2025.100866
K.B. Tan , P.Y. Tan , Y. Feng , C.C. Khaw , V. Raman , H.C. Ananda Murthy , R. Balachandran , S.K. Chen , O.J. Lee , K.Y. Chan , D. Zhou , M. Lu
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Abstract

Investigating the phase equilibria within the Bi2O3–MgO–Ta2O5 (BMT) system offers critical insights into the formation and stability of pyrochlore phases. This understanding enables the correlation of dielectric properties with phase equilibria data, facilitating the identification of compositions exhibiting optimal performance. Phase equilibria within the BMT system have been investigated across a temperature range of 800–1025 °C. The layouts of compatible triangles, encompassing two-phase, three-phase regions and the single-phase BMT subsolidus solution area, have been determined through qualitative XRD phase analysis of approximately 150 synthesised compositions. The BMT trapezoidal cubic pyrochlore region could be represented by the general formula of Bi3.56-xMg1.96-yTa2.48+x + yO13.50+x+(3/2)y, 0.00 ≤ x ≤ 0.32; 0.00 ≤ y ≤ 0.20. Two formation mechanisms are proposed: (i) compositions of Bi3.56-xMg1.96Ta2.48+xO13.50+x at fixed MgO content, involving a one-to-one substitution of Bi3+ by Ta5+ and oxygen non-stoichiometry x Bi3+ → x Ta5+ + x O2− and (ii) Bi3.56Mg1.96-yTa2.48+yO13.50+(3/2)y at fixed bismuth content, with Mg content reduction proportional to Ta5+ and O2− substitution, i.e. y Mg2+ → y Ta5+ + 3y/2 O2−. Dielectric properties within this extensive subsolidus solution area exhibit variability; specifically, BMT pyrochlores exhibit dielectric constants (ε′) ranging from 70 to 84, dielectric losses (tan δ) in the order of 0.2–9.1 × 10−3, negative temperature coefficients of dielectric constants (TCε′) ranging from 130 to 360 ppm/°C and activation energies (Ea) ranging from 1.10 to 1.48 eV.

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Journal of Science: Advanced Materials and Devices
Journal of Science: Advanced Materials and Devices Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
11.90
自引率
2.50%
发文量
88
审稿时长
47 days
期刊介绍: In 1985, the Journal of Science was founded as a platform for publishing national and international research papers across various disciplines, including natural sciences, technology, social sciences, and humanities. Over the years, the journal has experienced remarkable growth in terms of quality, size, and scope. Today, it encompasses a diverse range of publications dedicated to academic research. Considering the rapid expansion of materials science, we are pleased to introduce the Journal of Science: Advanced Materials and Devices. This new addition to our journal series offers researchers an exciting opportunity to publish their work on all aspects of materials science and technology within the esteemed Journal of Science. With this development, we aim to revolutionize the way research in materials science is expressed and organized, further strengthening our commitment to promoting outstanding research across various scientific and technological fields.
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