Improvement of morphology and electrical properties of boron-doped diamond films via seeding with HPHT nanodiamonds synthesized from 9-borabicyclononane

IF 4.3 3区 材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS Diamond and Related Materials Pub Date : 2025-02-19 DOI:10.1016/j.diamond.2025.112127
Stepan Stehlik , Stepan Potocky , Katerina Aubrechtova Dragounova , Petr Belsky , Rostislav Medlin , Andrej Vincze , Evgeny A. Ekimov , Alexander Kromka
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Abstract

Boron-doped diamond (BDD) films are becoming increasingly popular as electrode materials due to their broad potential window and stability in harsh conditions and environments. Therefore, optimizing the crystal quality and minimizing defect density to maximize electronic properties (e.g. conductivity) of BDD is of great importance. This study investigates the influence of different hydrogenated nanodiamond (H-ND) seeding layers on the growth and properties of BDD films. Three types of seeding H-NDs were examined: detonation (H-DND) and top-down high-pressure high-temperature NDs (TD_HPHT H-ND), and boron-doped NDs (H-BND) newly synthesized at high-pressure high-temperature from an organic precursor. Purified and oxidized BND (O-BND) samples yielded clear, blue, and stable colloidal dispersions. Subsequent thermal hydrogenation reversed their zeta potential from – 32 mV to +44 mV and promoted the seeding of negatively charged surfaces. All three H-ND types formed dense seeding layers on SiO2 and Si/SiOx substrates, which enabled the growth of BDD films by chemical vapor deposition (CVD). Despite variations in initial surface coverage among the seeding layers (13–25 %), all NDs facilitated the growth of fully closed BDD films approximately 1 μm thick. Significant differences in film morphology and electrical properties were observed. H-BND nucleation yielded the BDD films with the largest crystals (up to 1000 nm) and lowest sheet resistance (400 Ω/sq). This superior performance is attributed to the uniform particle shape and monocrystalline character of H-BND, as corroborated by FTIR, TEM, and SAXS measurements. These findings highlight the critical role of seeding layer properties in determining consequent diamond film evolution and establish H-BNDs as promising seeding material for the growth of high-quality BDD films suitable for electronic and electrochemical applications.

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掺硼金刚石(BDD)薄膜因其广阔的潜在窗口以及在恶劣条件和环境下的稳定性,正日益成为一种流行的电极材料。因此,优化晶体质量和降低缺陷密度以最大限度地提高 BDD 的电子特性(如导电性)就显得尤为重要。本研究探讨了不同氢化纳米金刚石 (H-ND) 种子层对 BDD 薄膜生长和特性的影响。研究考察了三种类型的氢化纳米金刚石 (H-ND) 种子层:引爆 (H-DND) 和自上而下的高压高温氢化纳米金刚石 (TD_HPHT H-ND),以及由有机前驱体在高压高温下新合成的掺硼氢化纳米金刚石 (H-BND)。纯化和氧化的 BND(O-BND)样品产生了透明、蓝色和稳定的胶体分散体。随后的热氢化将它们的 zeta 电位从 - 32 mV 逆转为 +44 mV,并促进了带负电表面的播种。所有这三种 H-ND 类型都在 SiO2 和 Si/SiOx 基底上形成了致密的播种层,从而能够通过化学气相沉积(CVD)技术生长出 BDD 薄膜。尽管播种层的初始表面覆盖率(13-25%)存在差异,但所有 ND 都能促进厚度约为 1 μm 的全封闭 BDD 薄膜的生长。观察到薄膜形态和电性能存在显著差异。H-BND 成核产生的 BDD 薄膜具有最大的晶体(达 1000 nm)和最低的薄层电阻(400 Ω/sq)。这种优异的性能归功于 H-BND 均匀的颗粒形状和单晶特性,傅立叶变换红外光谱、TEM 和 SAXS 测量也证实了这一点。这些发现凸显了播种层特性在决定金刚石薄膜演化过程中的关键作用,并将 H-BND 树立为适合电子和电化学应用的高质量 BDD 薄膜生长的播种材料。
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来源期刊
Diamond and Related Materials
Diamond and Related Materials 工程技术-材料科学:综合
CiteScore
6.00
自引率
14.60%
发文量
702
审稿时长
2.1 months
期刊介绍: DRM is a leading international journal that publishes new fundamental and applied research on all forms of diamond, the integration of diamond with other advanced materials and development of technologies exploiting diamond. The synthesis, characterization and processing of single crystal diamond, polycrystalline films, nanodiamond powders and heterostructures with other advanced materials are encouraged topics for technical and review articles. In addition to diamond, the journal publishes manuscripts on the synthesis, characterization and application of other related materials including diamond-like carbons, carbon nanotubes, graphene, and boron and carbon nitrides. Articles are sought on the chemical functionalization of diamond and related materials as well as their use in electrochemistry, energy storage and conversion, chemical and biological sensing, imaging, thermal management, photonic and quantum applications, electron emission and electronic devices. The International Conference on Diamond and Carbon Materials has evolved into the largest and most well attended forum in the field of diamond, providing a forum to showcase the latest results in the science and technology of diamond and other carbon materials such as carbon nanotubes, graphene, and diamond-like carbon. Run annually in association with Diamond and Related Materials the conference provides junior and established researchers the opportunity to exchange the latest results ranging from fundamental physical and chemical concepts to applied research focusing on the next generation carbon-based devices.
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