Improvement of morphology and electrical properties of boron-doped diamond films via seeding with HPHT nanodiamonds synthesized from 9-borabicyclononane
Stepan Stehlik , Stepan Potocky , Katerina Aubrechtova Dragounova , Petr Belsky , Rostislav Medlin , Andrej Vincze , Evgeny A. Ekimov , Alexander Kromka
{"title":"Improvement of morphology and electrical properties of boron-doped diamond films via seeding with HPHT nanodiamonds synthesized from 9-borabicyclononane","authors":"Stepan Stehlik , Stepan Potocky , Katerina Aubrechtova Dragounova , Petr Belsky , Rostislav Medlin , Andrej Vincze , Evgeny A. Ekimov , Alexander Kromka","doi":"10.1016/j.diamond.2025.112127","DOIUrl":null,"url":null,"abstract":"<div><div>Boron-doped diamond (BDD) films are becoming increasingly popular as electrode materials due to their broad potential window and stability in harsh conditions and environments. Therefore, optimizing the crystal quality and minimizing defect density to maximize electronic properties (e.g. conductivity) of BDD is of great importance. This study investigates the influence of different hydrogenated nanodiamond (H-ND) seeding layers on the growth and properties of BDD films. Three types of seeding H-NDs were examined: detonation (H-DND) and top-down high-pressure high-temperature NDs (TD_HPHT H-ND), and boron-doped NDs (H-BND) newly synthesized at high-pressure high-temperature from an organic precursor. Purified and oxidized BND (O-BND) samples yielded clear, blue, and stable colloidal dispersions. Subsequent thermal hydrogenation reversed their zeta potential from – 32 mV to +44 mV and promoted the seeding of negatively charged surfaces. All three H-ND types formed dense seeding layers on SiO<sub>2</sub> and Si/SiO<sub>x</sub> substrates, which enabled the growth of BDD films by chemical vapor deposition (CVD). Despite variations in initial surface coverage among the seeding layers (13–25 %), all NDs facilitated the growth of fully closed BDD films approximately 1 μm thick. Significant differences in film morphology and electrical properties were observed. H-BND nucleation yielded the BDD films with the largest crystals (up to 1000 nm) and lowest sheet resistance (400 Ω/sq). This superior performance is attributed to the uniform particle shape and monocrystalline character of H-BND, as corroborated by FTIR, TEM, and SAXS measurements. These findings highlight the critical role of seeding layer properties in determining consequent diamond film evolution and establish H-BNDs as promising seeding material for the growth of high-quality BDD films suitable for electronic and electrochemical applications.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"154 ","pages":"Article 112127"},"PeriodicalIF":4.3000,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Diamond and Related Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925963525001840","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
引用次数: 0
Abstract
Boron-doped diamond (BDD) films are becoming increasingly popular as electrode materials due to their broad potential window and stability in harsh conditions and environments. Therefore, optimizing the crystal quality and minimizing defect density to maximize electronic properties (e.g. conductivity) of BDD is of great importance. This study investigates the influence of different hydrogenated nanodiamond (H-ND) seeding layers on the growth and properties of BDD films. Three types of seeding H-NDs were examined: detonation (H-DND) and top-down high-pressure high-temperature NDs (TD_HPHT H-ND), and boron-doped NDs (H-BND) newly synthesized at high-pressure high-temperature from an organic precursor. Purified and oxidized BND (O-BND) samples yielded clear, blue, and stable colloidal dispersions. Subsequent thermal hydrogenation reversed their zeta potential from – 32 mV to +44 mV and promoted the seeding of negatively charged surfaces. All three H-ND types formed dense seeding layers on SiO2 and Si/SiOx substrates, which enabled the growth of BDD films by chemical vapor deposition (CVD). Despite variations in initial surface coverage among the seeding layers (13–25 %), all NDs facilitated the growth of fully closed BDD films approximately 1 μm thick. Significant differences in film morphology and electrical properties were observed. H-BND nucleation yielded the BDD films with the largest crystals (up to 1000 nm) and lowest sheet resistance (400 Ω/sq). This superior performance is attributed to the uniform particle shape and monocrystalline character of H-BND, as corroborated by FTIR, TEM, and SAXS measurements. These findings highlight the critical role of seeding layer properties in determining consequent diamond film evolution and establish H-BNDs as promising seeding material for the growth of high-quality BDD films suitable for electronic and electrochemical applications.
期刊介绍:
DRM is a leading international journal that publishes new fundamental and applied research on all forms of diamond, the integration of diamond with other advanced materials and development of technologies exploiting diamond. The synthesis, characterization and processing of single crystal diamond, polycrystalline films, nanodiamond powders and heterostructures with other advanced materials are encouraged topics for technical and review articles. In addition to diamond, the journal publishes manuscripts on the synthesis, characterization and application of other related materials including diamond-like carbons, carbon nanotubes, graphene, and boron and carbon nitrides. Articles are sought on the chemical functionalization of diamond and related materials as well as their use in electrochemistry, energy storage and conversion, chemical and biological sensing, imaging, thermal management, photonic and quantum applications, electron emission and electronic devices.
The International Conference on Diamond and Carbon Materials has evolved into the largest and most well attended forum in the field of diamond, providing a forum to showcase the latest results in the science and technology of diamond and other carbon materials such as carbon nanotubes, graphene, and diamond-like carbon. Run annually in association with Diamond and Related Materials the conference provides junior and established researchers the opportunity to exchange the latest results ranging from fundamental physical and chemical concepts to applied research focusing on the next generation carbon-based devices.