Dynamics of the aging process of field emission from an array of p-type pyramidal Si emitters

IF 4.9 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Sensors and Actuators A-physical Pub Date : 2025-05-01 Epub Date: 2025-02-21 DOI:10.1016/j.sna.2025.116356

Anatoly G. Kolosko , Gleb D. Demin , Eugeni O. Popov , Sergei V. Filippov , Ilya D. Evsikov , Bogdan V. Lobanov , Nikolay A. Djuzhev

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Abstract

The emission characteristics of a cathode consisting of an array of p-type Si pyramidal field emitters have been studied. Using advanced computerized technique for a comprehensive analysis of the properties of field emission structures, the process of activation of emission sites, operation of the cathode in the mode of relative stability of the current level, as well as field emission in the mode of extreme and unstable currents were analyzed. The field emission orthodoxy test demonstrated the difficulty of describing the performance of Si tips using the classical Murphy-Good theoretical formalism for metals. Using Morgulis-Stratton theory, which takes into account the features of field-electron emission from the semiconductor, a simulation of the properties of the cathode under consideration was carried out, and analysis of its experimental current-voltage characteristics was performed. The calculated field enhancement factor at the top of the Si pyramidal field emitter coincided with the value obtained from the experiment with high accuracy.

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p型锥体硅发射体场发射老化过程的动力学研究

研究了由p型硅锥体场发射体阵列组成的阴极的发射特性。采用先进的计算机技术对场发射结构的性质进行了全面分析，分析了场发射部位的激活过程、阴极在电流水平相对稳定模式下的工作过程以及极端和不稳定电流模式下的场发射过程。场发射正统测试证明了用经典的金属墨菲-古德理论形式描述硅尖端性能的困难。利用考虑半导体场电子发射特性的Morgulis-Stratton理论，对阴极的性能进行了模拟，并对阴极的实验电流-电压特性进行了分析。计算得到的Si锥体场发射极顶部场增强系数与实验结果吻合，且精度较高。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...