A novel two-input NOR logic gate using a dual-gate field effect transistor based on an OPE molecule

IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2025-02-25 DOI:10.1007/s10825-025-02297-3
Masoumeh Tirgar Fakheri, Mohammad A. Tehrani, Keivan Navi
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Abstract

Nanotechnology has revolutionized circuit design by enabling highly efficient and compact components. Central to this innovation is the two-input NOR logic gate, a universal element in logic circuits that facilitates the construction of diverse logic configurations. Its versatility plays a pivotal role in digital logic design, particularly within the realm of molecular transistor technology, where miniaturization and efficiency are paramount. In this paper, a novel device is presented based on the Oligo (phenylene ethynylene) (OPE) molecule. OPE molecules offers significant advantages in digital circuits due to their superior electronic properties, nanoscale size, self-assembling capabilities, and tunable characteristics. By leveraging this intriguing feature of the proposed dual-gate molecular transistor, a two-input NOR logic gate is realized. The study employs advanced simulation techniques, including Non-Equilibrium Green’s Function formalism and density functional theory, to model quantum transport properties. Insights gained from these simulations elucidate the performance and reliability of molecular transistors under varying operational conditions, advancing our understanding of their potential in future nanoelectronics applications.

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一种基于OPE分子的双栅场效应晶体管的新型双输入NOR逻辑门
纳米技术通过实现高效率和紧凑的组件,彻底改变了电路设计。这项创新的核心是双输入NOR逻辑门,这是逻辑电路中的通用元件,有助于构建各种逻辑配置。它的多功能性在数字逻辑设计中起着关键作用,特别是在分子晶体管技术领域,小型化和效率是至关重要的。本文提出了一种基于低聚苯乙炔(OPE)分子的新型器件。由于其优越的电子特性、纳米级尺寸、自组装能力和可调谐特性,OPE分子在数字电路中具有显著的优势。利用所提出的双栅分子晶体管的这一有趣特性,实现了双输入NOR逻辑门。该研究采用先进的模拟技术,包括非平衡格林函数形式主义和密度泛函理论,来模拟量子输运特性。从这些模拟中获得的见解阐明了分子晶体管在不同操作条件下的性能和可靠性,促进了我们对其在未来纳米电子学应用中的潜力的理解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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