Computational Analysis of Mostar Type Indices and Entropy Measures in Silicon Dioxide and Nanostructures

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Silicon Pub Date : 2025-01-15 DOI:10.1007/s12633-025-03221-x
Jiang-Hua Tang, Muhammad Kamran Siddiqui, Muhammad Yousaf Bhatti, Muhammad Younas, Shazia Manzoor, Muhammad Farhan Hanif
{"title":"Computational Analysis of Mostar Type Indices and Entropy Measures in Silicon Dioxide and Nanostructures","authors":"Jiang-Hua Tang,&nbsp;Muhammad Kamran Siddiqui,&nbsp;Muhammad Yousaf Bhatti,&nbsp;Muhammad Younas,&nbsp;Shazia Manzoor,&nbsp;Muhammad Farhan Hanif","doi":"10.1007/s12633-025-03221-x","DOIUrl":null,"url":null,"abstract":"<div><p>This article presents a comprehensive topological analysis of Mostar-type indices and entropy measures applied to Silicon Dioxide <span>\\((SiO_{2})\\)</span> and nanostructures. To characterize the complexity and variety within <span>\\(SiO_{2}\\)</span> and other nanostructures, this research looks into the calculation of Mostar-type indices, a unique mathematical framework, and entropy metrics. This work presents a thorough investigation of the atomic arrangements and information content inherent in these materials by using cutting-edge computational tools and algorithms. The measurement of complex molecular structures can be achieved through the correlation of entropy with graphs. Various graph entropies have been proposed in the literature. This study introduces novel graph entropies that utilize bond additive indices to assess network and graph peripherality. Specifically, we calculated the Mostar type indices, Mostar entropy, edge Mostar entropy, and total Mostar entropy for molecular structures such as <span>\\(SiO_{2}\\)</span>, <span>\\(C_{8}\\)</span> layer structure, and melem chain nanostructure. Moreover, analytical expressions for these entropies were derived using the cut method.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 3","pages":"599 - 614"},"PeriodicalIF":2.8000,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03221-x","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

Abstract

This article presents a comprehensive topological analysis of Mostar-type indices and entropy measures applied to Silicon Dioxide \((SiO_{2})\) and nanostructures. To characterize the complexity and variety within \(SiO_{2}\) and other nanostructures, this research looks into the calculation of Mostar-type indices, a unique mathematical framework, and entropy metrics. This work presents a thorough investigation of the atomic arrangements and information content inherent in these materials by using cutting-edge computational tools and algorithms. The measurement of complex molecular structures can be achieved through the correlation of entropy with graphs. Various graph entropies have been proposed in the literature. This study introduces novel graph entropies that utilize bond additive indices to assess network and graph peripherality. Specifically, we calculated the Mostar type indices, Mostar entropy, edge Mostar entropy, and total Mostar entropy for molecular structures such as \(SiO_{2}\), \(C_{8}\) layer structure, and melem chain nanostructure. Moreover, analytical expressions for these entropies were derived using the cut method.

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
求助全文
约1分钟内获得全文 去求助
来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
期刊最新文献
Radiation-Stimulated Transformation of Cxygen Atoms Between Impurity Phase States of A Growing Silicon Single Crystal Ecologically Sound Syntheses of Imidazoindole Derivatives Mediated by Cu-MCM-41-phen under Room Temperature Sustainable Recycling of Silicon from End-of-Life Photovoltaic Panels for the Synthesis of Porous Cordierite Via Bischofite-Assisted Chlorination Silicon Cycling in Forest Ecosystems: A Review Focusing on the Role of Soil Biogeochemistry Engineered Calcium Silicate-Hexaboride Biocomposites: A Versatile Platform for Personalized Orthopedic Therapies
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1