Ameliorating the Features of TiN/SiO2 Promising Nanoceramic Doped Optical Polymer for Multifunctional Optoelectronics Applications

IF 3.3 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Silicon Pub Date : 2025-01-15 DOI:10.1007/s12633-025-03220-y
Ahmed Hashim, Ghaith Ahmed, Hamed Ibrahim, Aseel Hadi
{"title":"Ameliorating the Features of TiN/SiO2 Promising Nanoceramic Doped Optical Polymer for Multifunctional Optoelectronics Applications","authors":"Ahmed Hashim,&nbsp;Ghaith Ahmed,&nbsp;Hamed Ibrahim,&nbsp;Aseel Hadi","doi":"10.1007/s12633-025-03220-y","DOIUrl":null,"url":null,"abstract":"<div><p>The goal of this work is to improve the optical and structural properties of titanium nitride(TiN)- silica(SiO<sub>2</sub>) promising nanoceramic doped polystyrene (PS) to apply in flexible nanoelectronics and optical fields. The films of (PS-TiN-SiO<sub>2</sub>) were produced utilizing the casting process. The structure, and optical properties of (PS-TiN-SiO<sub>2</sub>) nanostructures were examined. The structure characteristics of (PS-TiN-SiO<sub>2</sub>) nanostructures were tested using FTIR and optical microscope(OM). The OM images confirmed the good dispersion of (TiN-SiO<sub>2</sub>)NPs throughout the (PS) matrix, whilst the FTIR revealed a physical relationship between the polymer (PS) and the nanoparticles. The optical characteristics were examined at wavelengths (λ = 320-920nm). The study found that when TiN-SiO<sub>2</sub> NPs reaching 2.8 wt%, the absorbance increased of 32.8% and transmission decreased of 11.3% at wavelength(360 nm), making them perfect for various optical fields. When TiN-SiO<sub>2</sub> NPs concentration reached of 2.8 wt%, the energy gap of PS decreased to 2.53eV and refractive index increased from 2 to 2.24 making (PS-TiN-SiO<sub>2</sub>) nanostructures ideal for optoelectronics nanodevices. As the concentration of TiN-SiO<sub>2</sub> NPs rises, the other optical parameters(absorption coefficient, extinction coefficient, real and imaginary dielectric constants, and optical conductivity) were increased. Finally, the results confirmed that the (PS-TiN-SiO<sub>2</sub>) nanostructures may be considered as a future nanosystems to exploit in a variety of potential nanoelectronics and optics applications.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 3","pages":"585 - 598"},"PeriodicalIF":3.3000,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03220-y","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

Abstract

The goal of this work is to improve the optical and structural properties of titanium nitride(TiN)- silica(SiO2) promising nanoceramic doped polystyrene (PS) to apply in flexible nanoelectronics and optical fields. The films of (PS-TiN-SiO2) were produced utilizing the casting process. The structure, and optical properties of (PS-TiN-SiO2) nanostructures were examined. The structure characteristics of (PS-TiN-SiO2) nanostructures were tested using FTIR and optical microscope(OM). The OM images confirmed the good dispersion of (TiN-SiO2)NPs throughout the (PS) matrix, whilst the FTIR revealed a physical relationship between the polymer (PS) and the nanoparticles. The optical characteristics were examined at wavelengths (λ = 320-920nm). The study found that when TiN-SiO2 NPs reaching 2.8 wt%, the absorbance increased of 32.8% and transmission decreased of 11.3% at wavelength(360 nm), making them perfect for various optical fields. When TiN-SiO2 NPs concentration reached of 2.8 wt%, the energy gap of PS decreased to 2.53eV and refractive index increased from 2 to 2.24 making (PS-TiN-SiO2) nanostructures ideal for optoelectronics nanodevices. As the concentration of TiN-SiO2 NPs rises, the other optical parameters(absorption coefficient, extinction coefficient, real and imaginary dielectric constants, and optical conductivity) were increased. Finally, the results confirmed that the (PS-TiN-SiO2) nanostructures may be considered as a future nanosystems to exploit in a variety of potential nanoelectronics and optics applications.

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
改进TiN/SiO2纳米陶瓷掺杂光学聚合物的特性及其在多功能光电子学中的应用
本研究的目的是改善氮化钛(TiN)-二氧化硅(SiO2)掺杂聚苯乙烯(PS)纳米陶瓷在柔性纳米电子学和光学领域的光学和结构性能。采用铸造工艺制备了(PS-TiN-SiO2)薄膜。研究了(PS-TiN-SiO2)纳米结构的结构和光学性能。采用FTIR和光学显微镜对(PS-TiN-SiO2)纳米结构的结构特性进行了测试。OM图像证实了(TiN-SiO2)NPs在(PS)基体中的良好分散,而FTIR则揭示了聚合物(PS)与纳米颗粒之间的物理关系。在波长(λ = 320-920nm)处检测光学特性。研究发现,当TiN-SiO2 NPs达到2.8 wt%时,在波长(360 nm)处的吸光度增加了32.8%,透射率下降了11.3%,可以很好地用于各种光场。当TiN-SiO2 NPs浓度达到2.8 wt%时,PS的能隙减小到2.53eV,折射率从2增加到2.24,使得PS-TiN-SiO2纳米结构成为光电子纳米器件的理想材料。随着TiN-SiO2 NPs浓度的增加,其他光学参数(吸收系数、消光系数、实介电常数和虚介电常数、光学电导率)均增加。最后,结果证实了(PS-TiN-SiO2)纳米结构可以被认为是未来的纳米系统,在各种潜在的纳米电子学和光学应用中得到开发。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
期刊最新文献
Sustainable Ternary Geopolymer Concrete with Industrial Waste: Performance Modelling, Mechanical, Microstructural, and Sustainability Insights Cryogenic and Quantum Simulation of Short Channel 30 nm SOI MOSFET: An NEGF Quantum Simulation Sensitivity Prediction of a Hetero-Dielectric BioTFET Using ARIMA Model with Limited Dataset CoAl₀.₂Fe₁.₈O₄ Thin Films: Synthesis, Structural, Morphological, Optical properties, and Charge Transport Characteristics in CoAl₀.₂Fe₁.₈O₄/p-Si Heterojunctions Silicon fertilization enhances soil microbial dynamics and activity in onion crops under semiarid conditions
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1