Tuning Structural and Topological Properties of Silicon-Based Orthorhombic Crystals for Enhanced Radiation Shielding

IF 3.3 3区材料科学 Q3 CHEMISTRY, PHYSICAL Silicon Pub Date : 2025-01-16 DOI:10.1007/s12633-024-03218-y

Z. Y. Khattari

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Abstract

This study explores γ-radiations shield character of select Si-based orthorhombic crystals, specifically CaSrSi, BaMgSi, MgAlSi, and MgSrSi, to assess their potential for γ-ray shielding applications. Utilizing Hirshfeld topological geometries (HTGs), investigation of the structural and compositional characteristics that contributes to these materials' effectiveness in attenuating high-energy photons. By analyzing the essential parameters such as the MAC, LAC, and Z_eff, the study demonstrate that BaMgSi crystal, in particular, exhibits a superior capacity for radiation attenuation due to its higher MAC ∈ [0.039, 48.280] cm².g⁻¹, LAC ∈ [0.144, 179] cm⁻¹ and Z_eff ∈ [37, 48] values in the studied energy range. The findings reveal a correlation between charge densities of HTGs and LAC values, indicating that the optimization of these topological parameters enhances the materials' shielding performance. The study highlights the potential of these crystals for various applications where effective radiation shielding is crucial. This research provides important prospective into designing of advanced crystals with improved attenuation capabilities for future innovations in radiation protection technologies.

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用于增强辐射屏蔽的硅基正交晶体的调谐结构和拓扑特性

本研究探讨了选定的硅基正交晶体，特别是CaSrSi、BaMgSi、MgAlSi和MgSrSi的γ射线屏蔽特性，以评估它们在γ射线屏蔽应用中的潜力。利用Hirshfeld拓扑几何（HTGs），研究有助于这些材料有效衰减高能光子的结构和成分特征。通过对MAC、LAC、Zeff等关键参数的分析，研究表明，特别是BaMgSi晶体，由于其MAC∈[0.039,48.280]cm2较高，具有较好的辐射衰减能力。g−1,LAC∈[0.144,179]cm−1,Zeff∈[37,48]。研究结果揭示了HTGs的电荷密度与LAC值之间的相关性，表明这些拓扑参数的优化提高了材料的屏蔽性能。这项研究强调了这些晶体在各种应用中的潜力，其中有效的辐射屏蔽是至关重要的。该研究为设计具有改进衰减能力的先进晶体为未来的辐射防护技术创新提供了重要的前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

5.90

自引率

20.60%

发文量

685

审稿时长

>12 weeks

期刊介绍： The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.