Electron beam deposition of silicon-oxycarbonitride films in a nitrogen-containing hollow cathode discharge plasma in the fore-vacuum pressure range

Abstract

Silicon-oxycarbonitride films were deposited by electron beam evaporation of silicon carbide in a nitrogen-containing atmosphere. To increase the nitrogen reactivity, the deposition was carried out in a hollow cathode discharge plasma; thus the nitrogen atmosphere near the deposition region is a nitrogen plasma. The electron beam performs two functions simultaneously: evaporation of the source material and provision of a hollow cathode discharge. Increase in hollow cathode discharge current, and thus also the nitrogen plasma density, leads to an increase in the nitrogen content of the deposited films, as well as increased oxygen content, optical band gap, and film hardness.