AlN-based solid mounted resonators functionalized with WO3 films for NO detection

IF 4.9 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Sensors and Actuators A-physical Pub Date : 2025-02-21 DOI:10.1016/j.sna.2025.116355
José Manuel Carmona-Cejas, Teona Mirea, Jimena Olivares, Ricardo Hervás, Marta Clement
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Abstract

This work presents the design, manufacture and characterization of nitric oxide (NO) sensors operating at high temperatures. The sensors rely on AlN-based solidly mounted resonators (SMRs) as transduction devices. WO3 films are sputtered under different deposition conditions on the upper electrode of the devices to act as functionalization layers. We assess the topography and crystallinity of the layers before and after an annealing process of 350 °C for 12 h in air, observing a dominant monoclinic phase without significant degradation of the Q factor after such process. The characterization of the SMR sensors indicates that sub ppm detection can be achieved by all the studied configurations in the 200–300 °C range, with two of the sensors achieving high sensitivities even at 350 °C. The highest values reported are 5.32 kHz/ppm and 5.48 kHz/ppm for resonant and anti-resonant frequencies at 200 °C.
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用WO3薄膜功能化的铝基固体安装谐振器用于NO检测
本文介绍了在高温下工作的一氧化氮(NO)传感器的设计、制造和表征。传感器依靠基于铝的固体安装谐振器(smr)作为转导装置。在不同的沉积条件下,在器件的上电极上溅射WO3膜作为功能化层。我们评估了在空气中350 °C、12 h退火过程前后的层的形貌和结晶度,观察到在此过程后,主要的单斜相没有明显的Q因子退化。SMR传感器的特性表明,在200-300 °C范围内,所有研究配置都可以实现亚ppm检测,其中两个传感器即使在350 °C时也能实现高灵敏度。在200 °C时,谐振频率和反谐振频率的最高值分别为5.32 kHz/ppm和5.48 kHz/ppm。
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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