A Low Detection Limit and High Sensitivity Three-Dimensional Structured X-Ray Detector

IF 4.5 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2025-01-22 DOI:10.1109/LED.2025.3532677
Ruiliang Xu;Xiaochuan Xia;Zhongyuan Han;Deyu Wang;Guanbing Ji;Hongyun Wang;Xingzhu Cui;Yang Liu;Xin Shi;Wei Jiang;Ruirui Fan;Hongwei Liang
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Abstract

A novel and highly sensitive X-ray detector with three-dimensional structured electrodes (3D-SiC) has been prepared on a high-resistivity silicon carbide substrate. The detector consistently demonstrates a low leakage current of 7.1 pA and 280 pA with the bias of 200 V at room temperature and 150°C, respectively. In the X-ray response test, the 3D-SiC detector exhibits high sensitivity of ${5}.{65}\times {10} ^{{4}}~\mu $ C $\cdot $ Gy $_{\text {air}}^{-{1}}\cdot $ cm $^{-{2}}$ . Meanwhile, it exhibits a linear response to dose rates ranging from 0.67 to $3.02~\mu $ Gy $_{\text {air}}\cdot $ s $^{-{1}}$ . So, the detection limit could be calculated as low as 6.92 nGy $_{\text {air}}\cdot $ s $^{-{1}}$ . Comparing with planar semiconductor-based X-ray detectors, 3D-SiC detector shows ultra-high sensitivity with extremely low detection limit at room temperature. This characteristic renders it potentially advantageous in domains characterized by limited X-ray detection and imaging capabilities, such as the field of X-ray medical diagnosis.
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一种低检测限、高灵敏度的三维结构x射线探测器
在高电阻率碳化硅衬底上制备了一种新型的高灵敏度三维结构电极(3D-SiC) x射线探测器。在室温和150℃下,该检测器的漏电流分别为7.1 pA和280 pA,偏置为200 V。在x射线响应测试中,3D-SiC探测器表现出很高的灵敏度,达到${5}。{65}{10} \倍^{{4}}~ \μ\ cdot加元Gy美元$ _{\文本{空气}}^ {- {1}}\ cdot $厘米$ ^{-{2}}$。同时,它对剂量率在0.67 ~ 3.02~\mu $ Gy $_{\text {air}}\cdot $ s $^{-{1}}$范围内呈线性响应。因此,可以计算出检测限低至6.92 nGy $_{\text {air}}\cdot $ s $^{-{1}}$。与基于平面半导体的x射线探测器相比,3D-SiC探测器在室温下具有超高的灵敏度和极低的检测限。这一特性使得它在以有限的x射线检测和成像能力为特征的领域具有潜在的优势,例如x射线医学诊断领域。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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