Corrigendum to “The peculiarities of direct gallium nitride growth on silicon substrates after surface passivation with gallium atoms and indium as a surfactant” [Appl. Surf. Sci. 689 (2025) 162571]
{"title":"Corrigendum to “The peculiarities of direct gallium nitride growth on silicon substrates after surface passivation with gallium atoms and indium as a surfactant” [Appl. Surf. Sci. 689 (2025) 162571]","authors":"P.V. Seredin, D.L. Goloshchapov, O.K. Kosheleva, N.S. Buylov, Y.A. Peshkov, K.A. Barkov, E.S. Kersnovsky, A.M. Mizerov, S.N. Timoshnev, M.S. Sobolev, D.V. Serikov, A.I. Chukavin, V.N. Nevedomskiy, S.A. Kukushkin","doi":"10.1016/j.apsusc.2025.162776","DOIUrl":null,"url":null,"abstract":"The authors regret the incorrect text used in the Abstract section. The revised content is given below.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"51 1","pages":""},"PeriodicalIF":6.3000,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Surface Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.apsusc.2025.162776","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
The authors regret the incorrect text used in the Abstract section. The revised content is given below.
期刊介绍：
Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.
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