Corrigendum to “The peculiarities of direct gallium nitride growth on silicon substrates after surface passivation with gallium atoms and indium as a surfactant” [Appl. Surf. Sci. 689 (2025) 162571]

IF 6.9 2区材料科学 Q2 CHEMISTRY, PHYSICAL Applied Surface Science Pub Date : 2025-06-15 Epub Date: 2025-02-27 DOI:10.1016/j.apsusc.2025.162776

P.V. Seredin , D.L. Goloshchapov , O.K. Kosheleva , N.S. Buylov , Y.A. Peshkov , K.A. Barkov , E.S. Kersnovsky , A.M. Mizerov , S.N. Timoshnev , M.S. Sobolev , D.V. Serikov , A.I. Chukavin , V.N. Nevedomskiy , S.A. Kukushkin

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“镓原子和铟作为表面活性剂钝化后在硅衬底上直接生长氮化镓的特性”的勘误表。冲浪。科学通报。689 (2025)162571]

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来源期刊

Applied Surface Science 工程技术-材料科学：膜

CiteScore

12.50

自引率

7.50%

发文量

3393

审稿时长

67 days

期刊介绍： Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.