Effect of different metal oxide nanoparticle types on thermochromism of polydiacetylene as time-temperature indicators: Structural form, size, colorimetric sensing
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引用次数: 0
Abstract
Time-temperature indicators (TTIs) are widely fabricated from color-sensing components with polydiacetylene (PDA) and metal oxide nanoparticles (MO-NPs) film formation as the core-shell structure. The influence of different types of MO-NPs such as zinc (ZnO-NPs), silicon (SiO-NPs), silver (AgO-NPs), and titanium (TiO-NPs) was investigated by color-changing sensors on PDA solutions and chitosan-polyvinyl alcohol (PVA) films. The PDA and chitosan/PVA solutions were formed by adding different MO-NPs, to reveal their diverse properties. The TiO-NPs/PDA film, as the core-shell structure, combined with the carboxylic groups and interacted with PDA. A thin PDA shell was formed on the TiO-NPs that enlarged the surface area and allowed more free rotation of the PDA side chains for TiO-NPs/PDA. As a result, the core-shell structure showed improved sensitivity in color changing (blue to red at 35°C within 96 h), reflected by a higher color response (%CR), corresponding to the shifting of λmax in the absorption. The TiO-NPs/PDA-embedded chitosan/PVA film also showed color sensing improvement (purplish-blue to purplish orange at 35○C within 1 day). Thus, TiO-NPs/PDA-embedded chitosan/PVA films showed potential as TTI devices for tracking product quality and temperature during storage.
期刊介绍：
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...
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