Compact model for threshold voltage of organic thin film transistors

Abstract

Compact model of threshold voltage plays an important role in circuit design, material screening, and device analysis for organic thin-film transistors (OTFTs). In this work, by using the variable range hopping theory and the concept of transport energy, a novel compact model for the threshold voltage of organic thin film transistor has proposed. Based on the presented model, the varieties of temperature, channel length and drain voltage dependence of threshold voltage can be well described. Good agreement between the model and experimental data is demonstrated.