Voltage-controlled skyrmion manipulation chambers for neuromorphic computing

Abstract

Voltage-controlled magnetic skyrmion manipulation has emerged as a promising approach for designing high-density and low-power magnetic devices. This paper investigates the potential of magnetic skyrmion manipulation chambers for such devices, focusing on applications in neuromorphic computing systems. Here, a comprehensive analysis of the properties and characteristics of magnetic skyrmions, their manipulation techniques, and their suitability for magnetic devices is presented. The findings suggest that voltage-controlled skyrmion manipulation chambers have significant advantages over conventional technologies for applications such as high-density data storage, low-power spintronic devices, and adaptable neuromorphic computing systems. These advantages stem from the unique properties of skyrmions, including their topological stability, nanoscale dimensions, and efficient manipulation through voltage control. Furthermore, the dynamic rearrangement capabilities of skyrmion manipulation chambers make them ideal for implementing adaptable neuromorphic architectures and low-power skyrmion-based synaptic devices. This study provides a foundation for further research and development in skyrmion manipulation chambers to realize their potential in neuromorphic computing systems.