Enhanced Mode Localization in 2-DoF Weakly Coupled Electrostatic MEMS Resonant Sensor Devices via Blue-Sideband Excitation

IF 3.2 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2025-01-28 DOI:10.1109/TED.2025.3529406
Linlin Wang;Yuan Wang;Pan Zhang;Pui-In Mak;Rui P. Martins;Xinyu Wu;Chen Wang
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Abstract

This article for the first time introduces the blue-sideband excitation (BSE) scheme to two types of 2-degree-of-freedom (2-DoF) weakly coupled electrostatic resonant sensors, i.e., a 2-DoF electrostatically coupled resonating system with parallel suspension beams (Device 1) and a 2-DoF coupled double-ended tuning fork (DETF) resonant device (Device 2), boosting the functionality of the mode localization phenomena and ultimately achieving distinct performance upgradation. The amplitude ratio (AR) is hence adopted as the readout metric for the sensitivity characterization with respect to different external stiffness perturbations introduced by the capacitive transduction. Three paradigms of AR were implemented in this subject, namely, intermodal AR (IM-AR), interresonator AR (IR-AR), and interresonator-IM-AR (IRIM-AR), owing to the feature of simultaneous multiple-mode excitation of BSE. A comparison regarding the coupled resonant devices subject to the conventional drive scheme and the BSE was conducted, where the experimental results indicated that more than two orders of magnitude enhancement in sensitivity were achieved with the BSE scheme, along with the possibility of a pronounced ~17 times improvement in the noise floor, as well as the capability of simultaneous multiple parameter extraction across different resonators and vibration modes within the coupled system. This work further verified the feasibility and effectiveness of the BSE scheme, demonstrating the potential of such a technique for sensing applications based on mode-localized resonant sensors, fostering ultrahigh performance augmentation.
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基于蓝带激励的2自由度弱耦合静电MEMS谐振传感器增强模式定位
本文首次将蓝边带激励(BSE)方案引入两类2自由度(2- dof)弱耦合静电谐振传感器,即并联悬梁的2- dof静电耦合谐振系统(Device 1)和2- dof耦合双端音叉(DETF)谐振装置(Device 2),增强了模态定位现象的功能性,最终实现了明显的性能提升。因此,采用振幅比(AR)作为电容式换能器对不同外部刚度扰动的灵敏度表征的读出度量。由于BSE同时具有多模激发的特点,本课题实现了三种AR模式,即多模AR (IM-AR)、互谐振子AR (IR-AR)和互谐振子-IM-AR (IRIM-AR)。对比了传统驱动方案和BSE方案下的耦合谐振器件,实验结果表明,BSE方案的灵敏度提高了两个数量级以上,本底噪声提高了17倍,并且能够同时提取耦合系统内不同谐振腔和振动模式的多个参数。这项工作进一步验证了BSE方案的可行性和有效性,展示了这种基于模式局域共振传感器的传感应用技术的潜力,促进了超高性能的增强。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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