Experimental Demonstration and Modeling of BEOL-Compatible IGZO-Based Ferroelectric-Modulated Diodes

IF 3.2 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2025-02-04 DOI:10.1109/TED.2025.3534182

Leming Jiao;Zuopu Zhou;Zijie Zheng;Kaizhen Han;Qiwen Kong;Xiaolin Wang;Haiwen Xu;Jishen Zhang;Chen Sun;Yuye Kang;Gengchiau Liang;Xiao Gong

{"title":"Experimental Demonstration and Modeling of BEOL-Compatible IGZO-Based Ferroelectric-Modulated Diodes","authors":"Leming Jiao;Zuopu Zhou;Zijie Zheng;Kaizhen Han;Qiwen Kong;Xiaolin Wang;Haiwen Xu;Jishen Zhang;Chen Sun;Yuye Kang;Gengchiau Liang;Xiao Gong","doi":"10.1109/TED.2025.3534182","DOIUrl":null,"url":null,"abstract":"We experimentally demonstrate a back-end-of-line (BEOL) compatible InGaZnOx (IGZO)-based ferroelectric-modulated diode (FMD), showcasing effective enhancement of the memory window (MW) compared to ferroelectric field-effect transistor (FeFET) fabricated under identical process conditions. In addition, we establish a modeling framework elucidating the interplay between ferroelectric (FE) polarization and Schottky contact to reproduce the energy barrier modulation effect. A comparative analysis of MW formation mechanisms between conventional oxide semiconductor (OS) FeFETs and our novel FMDs is conducted, validating the performance improvements of our FMD devices by overcoming the weak erase problem of OS FeFETs. Furthermore, we carry out a systematic investigation into the structural dependence of the FMD MW by varying the Schottky metalwork functions and the semiconductor layer thicknesses. These critical insights, supported by both experiments and simulations, provide a design guideline for optimizing MW of BEOL-compatible FE memories to meet the requirements of future nonvolatile memory (NVM) applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1146-1153"},"PeriodicalIF":3.2000,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10870316/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

We experimentally demonstrate a back-end-of-line (BEOL) compatible InGaZnOx (IGZO)-based ferroelectric-modulated diode (FMD), showcasing effective enhancement of the memory window (MW) compared to ferroelectric field-effect transistor (FeFET) fabricated under identical process conditions. In addition, we establish a modeling framework elucidating the interplay between ferroelectric (FE) polarization and Schottky contact to reproduce the energy barrier modulation effect. A comparative analysis of MW formation mechanisms between conventional oxide semiconductor (OS) FeFETs and our novel FMDs is conducted, validating the performance improvements of our FMD devices by overcoming the weak erase problem of OS FeFETs. Furthermore, we carry out a systematic investigation into the structural dependence of the FMD MW by varying the Schottky metalwork functions and the semiconductor layer thicknesses. These critical insights, supported by both experiments and simulations, provide a design guideline for optimizing MW of BEOL-compatible FE memories to meet the requirements of future nonvolatile memory (NVM) applications.

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兼容beol的基于igzo的铁电调制二极管的实验演示和建模

我们实验展示了一种后端线（BEOL）兼容InGaZnOx （IGZO）的铁电调制二极管（FMD），与在相同工艺条件下制造的铁电场效应晶体管（FeFET）相比，它有效地增强了记忆窗口（MW）。此外，我们建立了一个模型框架，阐明了铁电（FE）极化与肖特基接触之间的相互作用，以再现能量势垒调制效应。比较分析了传统氧化物半导体（OS） ffet和我们的新型FMD之间的MW形成机制，验证了通过克服OS ffet的弱擦除问题，我们的FMD器件的性能得到了改善。此外，我们通过改变肖特基金属加工函数和半导体层厚度，系统地研究了FMD MW的结构依赖性。这些重要的见解得到了实验和模拟的支持，为优化MW级beol兼容FE存储器提供了设计指南，以满足未来非易失性存储器（NVM）应用的要求。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.