The Inverse Power Law-Normal Model for Right-Censored Data With Application to Life Prediction of Organic Light-Emitting Diodes

IF 3.2 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2025-02-04 DOI:10.1109/TED.2025.3531322
Omar Kittaneh;Sara Helal;M. A. Majid
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Abstract

This work generalizes the inverse power law-normal (IPL-normal) model for complete data to right-censored data, assuming that the coefficient of variation remains constant and free of stress. The maximum likelihood (ML) estimating equations of the model’s accelerating parameters and the general coefficient of variation are derived using new trivial but fundamental identities. The ML estimating equation of the general coefficient of variation is explicit and generalizes its counterpart for complete data, which was previously introduced. The ML method is compared with the classical least squares (LS) technique. Although the ML method is laborious and numerically sensitive, this article favors ML over LS for a drastic reason that only ML can estimate the general coefficient of variation, but it still recommends using both the methods for some other reasons. The generalized IPL-normal model is used to precisely specify the life model of organic light-emitting diodes based on a standard real data of complete samples of lives which was discussed in several previous works but censored in this work.
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右删失数据的反幂律-正态模型在有机发光二极管寿命预测中的应用
本工作将完整数据的逆幂律-正态(ipl -正态)模型推广到右删减数据,假设变异系数保持不变且无应力。利用新的平凡但基本的恒等式,导出了模型加速参数和一般变异系数的最大似然估计方程。一般变异系数的ML估计方程是明确的,并推广了之前介绍的完整数据的ML估计方程。将ML方法与经典的最小二乘(LS)方法进行了比较。虽然ML方法很费力,而且对数字很敏感,但本文更倾向于ML而不是LS,因为只有ML可以估计一般的变异系数,但出于其他一些原因,本文仍然建议使用这两种方法。本文采用广义ipl -法向模型,以完整寿命样本的标准真实数据为基础,精确地描述了有机发光二极管的寿命模型。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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