Flexible Inverter Based on Ambipolar OFETs Compatible With Finite Element Analysis

Abstract

With the demand for wearable integrated circuits in the field of flexible electronic, ambipolar organic field-effect transistors (OFETs) acting as both n-type and p-type performances are attracting more and more attention. In this article, a flexible inverter comprised of two identical ambipolar transistors was fabricated on the flexible muscovite substrate. The entire fabrication process for ambipolar transistors remains below 300°C, ensuring compatibility with backend-of-the-line (BEOL). The ambipolar transistor exhibits typical V-shape transfer curve with distinct branches for hole and electron transport, along with a comprehensive ambipolar region. The software ABAQUS was used to analyze the distribution of stress for the ambipolar transistor. Meanwhile, the ambipolar inverter comprised of the transistors can work for both positive and negative supply voltages ( ${V} _{\text {DD}}$ ) depending on input voltage ( ${V} _{\text {IN}}$ ). Furthermore, the inverter is highly flexible, which can work stably under different bending states. The proposed flexible inverter provides a possibility of application for flexible wearable integrated circuits.