{"title":"GaN Monolithic Optopairs for Rapid and High-Resolution Temperature Measurements","authors":"Hongying Yang;Yumeng Luo;Kwai Hei Li","doi":"10.1109/TED.2025.3525597","DOIUrl":null,"url":null,"abstract":"This article presents the fabrication and characterization of a gallium nitride (GaN)-based optopair for the temperature measurement. The monolithic device comprises a pair of indium gallium nitride (InGaN)/GaN multiquantum well diodes, enabling both light emission and detection functions. The device exhibits a monotonic increase in photocurrent response with increasing temperature, attributed to the increased spectral overlap between the emission and absorption. The developed device with a size of <inline-formula> <tex-math>$1.1\\times 1.3$ </tex-math></inline-formula> mm2 is capable of responding to changes in temperature range from <inline-formula> <tex-math>$26.5~^{\\circ }$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$150~^{\\circ }$ </tex-math></inline-formula>C. With the advantages of fast response of less than 0.5 s, high resolution of <inline-formula> <tex-math>$0.024~^{\\circ }$ </tex-math></inline-formula>C, and compact structure, the proposed chip-scale design shows great potential in the field of high-precision, real-time temperature measurement.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1191-1196"},"PeriodicalIF":2.9000,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10838386/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract
This article presents the fabrication and characterization of a gallium nitride (GaN)-based optopair for the temperature measurement. The monolithic device comprises a pair of indium gallium nitride (InGaN)/GaN multiquantum well diodes, enabling both light emission and detection functions. The device exhibits a monotonic increase in photocurrent response with increasing temperature, attributed to the increased spectral overlap between the emission and absorption. The developed device with a size of $1.1\times 1.3$ mm2 is capable of responding to changes in temperature range from $26.5~^{\circ }$ C to $150~^{\circ }$ C. With the advantages of fast response of less than 0.5 s, high resolution of $0.024~^{\circ }$ C, and compact structure, the proposed chip-scale design shows great potential in the field of high-precision, real-time temperature measurement.
期刊介绍：
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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