Quantitative Analysis of Trap Behaviors for Deuterium Annealing Effect on IGZO TFTs by TCAD and Experimental Characterization

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2025-01-22 DOI:10.1109/TED.2025.3529399

Hyeonjun Song;Soon Joo Yoon;Jaewook Yoo;Seongbin Lim;Ja-Yun Ku;Tae-Hyun Kil;Hongseung Lee;Jo Hak Jeong;Soyeon Kim;Moon-Kwon Lee;Hyeon-Sik Jang;Kiyoung Lee;Keun Heo;Jun-Young Park;Yoon Kyeung Lee;Hagyoul Bae

{"title":"Quantitative Analysis of Trap Behaviors for Deuterium Annealing Effect on IGZO TFTs by TCAD and Experimental Characterization","authors":"Hyeonjun Song;Soon Joo Yoon;Jaewook Yoo;Seongbin Lim;Ja-Yun Ku;Tae-Hyun Kil;Hongseung Lee;Jo Hak Jeong;Soyeon Kim;Moon-Kwon Lee;Hyeon-Sik Jang;Kiyoung Lee;Keun Heo;Jun-Young Park;Yoon Kyeung Lee;Hagyoul Bae","doi":"10.1109/TED.2025.3529399","DOIUrl":null,"url":null,"abstract":"In this article, we investigate the effect of annealing in deuterium (D2) ambient on the performance and reliability of InGaZnO (IGZO) thin-film transistors (TFTs). We examined the current-voltage (I–V) characteristics, as well as the on-state current (<inline-formula> <tex-math>${I}_{\\text {on}}$ </tex-math></inline-formula>), off-state current (<inline-formula> <tex-math>${I}_{\\text {off}}$ </tex-math></inline-formula>), and subthreshold slope (SS) under three different conditions: after device fabrication (as-fabricated), in a deteriorated state (after 7 days), and after D2 annealing. To analyze the reliability of IGZO TFTs, the oxygen vacancy (<inline-formula> <tex-math>${V}_{\\text {O}}$ </tex-math></inline-formula>) behavior was observed by extracting the subgap density of state (DOS) using I–V data. Quantitative and qualitative analyses of the changes in ion distribution inside the IGZO channel after D2 annealing were performed by X-ray photoelectron spectroscopy (XPS) and secondary-ion mass spectrometry (SIMS), respectively, both of which verified the effect of the D2 annealing. The validity of our results was further verified by comparing them to model parameters generated using a technology computer-aided design (TCAD) simulation.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1180-1183"},"PeriodicalIF":2.9000,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10849993/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

In this article, we investigate the effect of annealing in deuterium (D2) ambient on the performance and reliability of InGaZnO (IGZO) thin-film transistors (TFTs). We examined the current-voltage (I–V) characteristics, as well as the on-state current (

${I}_{\text {on}}$

), off-state current (

${I}_{\text {off}}$

), and subthreshold slope (SS) under three different conditions: after device fabrication (as-fabricated), in a deteriorated state (after 7 days), and after D2 annealing. To analyze the reliability of IGZO TFTs, the oxygen vacancy (

${V}_{\text {O}}$

) behavior was observed by extracting the subgap density of state (DOS) using I–V data. Quantitative and qualitative analyses of the changes in ion distribution inside the IGZO channel after D2 annealing were performed by X-ray photoelectron spectroscopy (XPS) and secondary-ion mass spectrometry (SIMS), respectively, both of which verified the effect of the D2 annealing. The validity of our results was further verified by comparing them to model parameters generated using a technology computer-aided design (TCAD) simulation.

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本文研究了在氘（D2）环境中退火对 InGaZnO（IGZO）薄膜晶体管（TFT）性能和可靠性的影响。我们研究了三种不同条件下的电流-电压（I-V）特性以及导通电流（${I}_{\text {on}}$）、关断电流（${I}_{\text {off}}$）和亚阈值斜率（SS）：器件制造后（原样）、劣化状态（7 天后）和 D2 退火后。为了分析 IGZO TFT 的可靠性，利用 I-V 数据提取亚空隙状态密度 (DOS)，观察氧空位 (${V}_{text {O}}$) 行为。通过 X 射线光电子能谱（XPS）和二次离子质谱（SIMS）分别对 D2 退火后 IGZO 沟道内离子分布的变化进行了定量和定性分析，这两种方法都验证了 D2 退火的效果。通过将我们的结果与利用技术计算机辅助设计 (TCAD) 模拟生成的模型参数进行比较，进一步验证了我们结果的正确性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.

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