Qiang Zhang;Quan Zhang;Yunfei Sun;Chengwei Yuan;Xuan Liu;Zhenqiang Cao
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引用次数: 0
Abstract
In this article, a compact TM$^{\circ }_{{01}}$ to TE$^{\circ }_{{01}}$ (symbol $\bigcirc $ represents the circular waveguide) mode converter for X-band high-power microwave (HPM) applications is designed, fabricated, and experimentally verified. The proposed device comprises three parts, which are a TM$^{\circ }_{{01}}$ to vertical polarization (VP) TE$^{\scriptscriptstyle \square }_{{10}}$ (symbol □ represents the rectangle waveguide) mode power divider, a horizontal polarization (HP) TE$^{\scriptscriptstyle \square }_{{10}}$ to TE$^{\circ }_{{01}}$ mode power combiner, and an N-way TE$^{\scriptscriptstyle \square }_{{10}}$ circumferential array polarization torsion structure (CA-PTS). The first two parts utilize the topologic structures of radial power dividers (RPDs), which are then connected by the CA-PTS. This novel methodology makes the input and output ports of the mode converter on the same axis, with the transverse and longitudinal dimensions of approximately $8.6\lambda _{{0}}$ and $3.5\lambda _{{0}}$ , respectively. Simulation results of the TM$^{\circ }_{{01}}$ to TE$^{\circ }_{{01}}$ mode converter demonstrate that the return loss is better than −15.0 dB from 8.28 to 8.74 GHz, while the insertion loss remains below −0.2 dB, and a remarkable conversion efficiency achieves 99.21% at the center frequency of 8.4 GHz. An 18-way prototype was subjected to experiments. The measured S-parameter results of the setup were in good agreement with simulation one. Under an input power of 0.5 W, the simulated maximum internal electric field measured 943 V/m, and the power handling capacity (PHC) was also validated in the HPM test.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.