{"title":"Total Ionizing Dose Responses of β-Ga₂O₃ Thin Film Solar-Blind Ultraviolet Photodetectors","authors":"Tao Xiao;Teng Ma;Zhifeng Lei;Weili Fu;Hong Zhang;Chao Peng;Zhangang Zhang;Hongjia Song;Zhao Fu;Daoyou Guo;Xiangli Zhong;Jinbin Wang;Xiaoping Ouyang","doi":"10.1109/TED.2025.3534175","DOIUrl":null,"url":null,"abstract":"This article investigated the total ionizing dose (TID) effects on the metal-semiconductor-metal (MSM) <inline-formula> <tex-math>$\\beta $ </tex-math></inline-formula>-Ga2O3 solar-blind ultraviolet photodetector under bias conditions through photoelectric response tests. The photocurrent and dark current of the device exhibited a notable increase after 2 Mrad(Si) TID irradiation. The TID irradiation caused a slight degradation in a photo-to-dark current ratio (PDCR). Additionally, microscopic characteristic changes and degradation mechanisms due to TID irradiation were evaluated using Raman spectroscopy, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The TID-induced oxygen vacancy defect in the <inline-formula> <tex-math>$\\beta $ </tex-math></inline-formula>-Ga2O3 film increased both the photocurrent and dark current of the device. This study demonstrated the outstanding TID radiation tolerance of biased <inline-formula> <tex-math>$\\beta $ </tex-math></inline-formula>-Ga2O3 solar-blind ultraviolet photodetectors, highlighting their significant potential for applications in the field of optoelectronics under extreme environmental conditions.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1249-1253"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10870321/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This article investigated the total ionizing dose (TID) effects on the metal-semiconductor-metal (MSM) $\beta $ -Ga2O3 solar-blind ultraviolet photodetector under bias conditions through photoelectric response tests. The photocurrent and dark current of the device exhibited a notable increase after 2 Mrad(Si) TID irradiation. The TID irradiation caused a slight degradation in a photo-to-dark current ratio (PDCR). Additionally, microscopic characteristic changes and degradation mechanisms due to TID irradiation were evaluated using Raman spectroscopy, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The TID-induced oxygen vacancy defect in the $\beta $ -Ga2O3 film increased both the photocurrent and dark current of the device. This study demonstrated the outstanding TID radiation tolerance of biased $\beta $ -Ga2O3 solar-blind ultraviolet photodetectors, highlighting their significant potential for applications in the field of optoelectronics under extreme environmental conditions.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.