Enabling High-Sensitivity Calorimetric Flow Sensor Using Vanadium Dioxide Phase-Change Material With Predictable Hysteretic Behavior

IF 3.2 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2025-01-30 DOI:10.1109/TED.2025.3532249
Yushan Zhou;Shuyu Fan;Ziying Zhu;Shanqian Su;Dibo Hou;Hongjian Zhang;Yunqi Cao
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Abstract

This study proposes a novel high-sensitivity calorimetric flow sensor based on vanadium dioxide (VO2) to meet the growing demand for low-flow detection. The thermoresistive effect characterization results of the fabricated VO2 thin film show a temperature coefficient of resistance (TCR) of $99\boldsymbol {\%}$ /K that is two orders of magnitude higher than that of conventional thermal sensing material, indicating its potential for enhancing the sensitivity of the calorimetric sensor. Notably, it exhibits a nonlinear temperature-dependent hysteretic behavior with the minor resistance-temperature curves nested in the major hysteresis curves, posing a challenge to the practical use of VO2-based sensors. Thus, a comprehensive hysteresis model, utilizing physical model for the major hysteresis loop and modified Preisach models for the minor hysteresis loop, has been established to give an accurate resistance-temperature response, providing a solid basis for the development of high performance sensor based on VO2. The finite element analysis (FEA) confirmed the proposed calorimetric sensor’s superior performance, with a linear range of 0– $0.4~\mu $ L/min and a normalized output sensitivity of 11.08 V/(m/s)/mW, consuming 1.5 times less power than dual-heater configurations. The dual-heater calorimetric sensor achieved a sensitivity of 21.23 V/(m/s)/mW in its CH mode, 18.3 times higher than conventional metal-based sensors. This work advances the understanding of VO2 hysteresis for microflow sensor design and paves the way for nonlinear phase-change material (PCM)-based microfluidic sensors.
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使用具有可预测滞后行为的二氧化钒相变材料实现高灵敏度量热流量传感器
为了满足日益增长的低流量检测需求,本研究提出了一种基于二氧化钒(VO2)的新型高灵敏度量热流量传感器。制备的VO2薄膜的热阻效应表征结果表明,其电阻温度系数(TCR)为$99\boldsymbol {\%}$ /K,比传统的热敏材料高出两个数量级,表明其具有提高量热传感器灵敏度的潜力。值得注意的是,它表现出非线性的温度依赖滞后行为,小电阻-温度曲线嵌套在主要的滞后曲线中,这对基于vo2的传感器的实际应用提出了挑战。因此,建立了一个综合的磁滞模型,利用物理模型对大磁滞回线和修正Preisach模型对小磁滞回线进行了精确的电阻-温度响应,为基于VO2的高性能传感器的开发提供了坚实的基础。有限元分析(FEA)证实了所提出的量热传感器的优越性能,线性范围为0 - $0.4~\mu $ L/min,归一化输出灵敏度为11.08 V/(m/s)/mW,功耗比双加热器配置低1.5倍。双加热器量热传感器在CH模式下的灵敏度为21.23 V/(m/s)/mW,是传统金属传感器的18.3倍。这项工作促进了对微流传感器设计中VO2滞后的理解,并为基于非线性相变材料(PCM)的微流传感器铺平了道路。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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