Enabling High-Sensitivity Calorimetric Flow Sensor Using Vanadium Dioxide Phase-Change Material With Predictable Hysteretic Behavior

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2025-01-30 DOI:10.1109/TED.2025.3532249
Yushan Zhou;Shuyu Fan;Ziying Zhu;Shanqian Su;Dibo Hou;Hongjian Zhang;Yunqi Cao
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Abstract

This study proposes a novel high-sensitivity calorimetric flow sensor based on vanadium dioxide (VO2) to meet the growing demand for low-flow detection. The thermoresistive effect characterization results of the fabricated VO2 thin film show a temperature coefficient of resistance (TCR) of $99\boldsymbol {\%}$ /K that is two orders of magnitude higher than that of conventional thermal sensing material, indicating its potential for enhancing the sensitivity of the calorimetric sensor. Notably, it exhibits a nonlinear temperature-dependent hysteretic behavior with the minor resistance-temperature curves nested in the major hysteresis curves, posing a challenge to the practical use of VO2-based sensors. Thus, a comprehensive hysteresis model, utilizing physical model for the major hysteresis loop and modified Preisach models for the minor hysteresis loop, has been established to give an accurate resistance-temperature response, providing a solid basis for the development of high performance sensor based on VO2. The finite element analysis (FEA) confirmed the proposed calorimetric sensor’s superior performance, with a linear range of 0– $0.4~\mu $ L/min and a normalized output sensitivity of 11.08 V/(m/s)/mW, consuming 1.5 times less power than dual-heater configurations. The dual-heater calorimetric sensor achieved a sensitivity of 21.23 V/(m/s)/mW in its CH mode, 18.3 times higher than conventional metal-based sensors. This work advances the understanding of VO2 hysteresis for microflow sensor design and paves the way for nonlinear phase-change material (PCM)-based microfluidic sensors.
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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