Increasing the Power Compression Factor by Overmoded Waveguide for Subnanosecond Microwave Pulse Generation

IF 3.2 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2025-01-29 DOI:10.1109/TED.2025.3532575
Zhiyuan Zhang;Ruoyang Pan;Weijie Wang;Yelei Yao;Wei Jiang;Zeiwei Wu;Youlei Pu;Jianxun Wang;Yong Luo;Guo Liu
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Abstract

In our previous study, we successfully generated subnanosecond microwave pulses with a high power compression factor using a standard rectangular waveguide. However, the compressor loss is substantial due to the operating frequency being close to the cutoff frequency, which greatly limits the power compression factor. The novelty of this manuscript is using a unilateral overmoded waveguide to mitigate the loss, thereby improving the efficiency and the power compression factor. Calculations indicate that the compressor loss could potentially be reduced by 48.9%, while the optimal power compression factor could increase by 104.5%, rising from 58.5 to 119.7, compared with the result of the standard waveguide. Under our current experimental conditions, we used a 5-m long overmoded waveguide compressor for proof of principle and generated an ultrashort pulse with a power compression factor of 50.2 and a 3 dB pulsewidth of 266 ps. Compared with the standard waveguide, the compressor loss was reduced by 13.5%, and the power compression factor increased by 13.6%. The experimental results are in good agreement with the simulations, indicating that this method has the potential to enhance the power compression factor and enable it to exceed 100.
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利用超模波导提高亚纳秒微波脉冲产生的功率压缩系数
在我们之前的研究中,我们成功地使用标准矩形波导产生了具有高功率压缩因子的亚纳秒微波脉冲。但由于工作频率接近截止频率,压缩机损耗较大,极大地限制了功率压缩系数。本文的新颖之处在于使用单边过模波导来减轻损耗,从而提高效率和功率压缩系数。计算表明,与标准波导相比,压缩损耗可降低48.9%,而最优功率压缩因子可提高104.5%,从58.5提高到119.7。在我们目前的实验条件下,我们使用5 m长的超模波导压缩器进行原理验证,产生了功率压缩系数为50.2、3 dB脉宽为266 ps的超短脉冲,与标准波导相比,压缩器损耗降低了13.5%,功率压缩系数提高了13.6%。实验结果与仿真结果吻合较好,表明该方法具有提高功率压缩系数并使其超过100的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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